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| 型号： | FDZ391P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3A 6-WLCSP |
| 产品目录绘图： | 6-WL-CSP Package |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1065pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UFBGA，WLCSP |
| 供应商设备封装： | 6-WLCSP |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDZ391PDKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DS S
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = -250 μ A, V GS = 0 V
I D = -250 μ A, referenced to 25 °C
V DS = -16 V, V GS = 0 V
V GS = ±8 V, V DS = 0 V
-20
-12
-1
±100
V
mV /° C
μ A
nA
On Characteristics
V GS(th)
? V GS(th )
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = -250 μ A
I D = -250 μ A, referenced to 25 °C
-0.4
-0.6
2
-1.5
V
mV/°C
V GS = -4.5 V, I D = -1 A
74
85
r DS(on)
Drain to Source On Resistance
V GS = -2.5 V, I D = -1 A
V GS = -1.5 V, I D = -1 A
90
140
123
200
m ?
V GS = -4.5 V, I D = -1 A T J = 125 °C
100
123
I D(on)
g FS
On to State Drain Current
Forward Transconductance
V GS = -4.5 V, V DS = - 5 V
V DS = -5 V, I D = -1 A
-10
7
A
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = -10 V, V GS = 0 V,
f = 1 MHz
f = 1 MHz
800
155
90
9
1065
205
135
pF
pF
pF
?
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = -10 V, I D = -1 A
V GS = -4.5 V, R GEN = 6 ?
V GS = -4.5 V
V DD = -10 V
I D = -1 A
11
10
50
30
9
1
2
20
20
80
48
13
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
I S
Maximum continuous Drain-Source Diode Forward Current
-1.1
A
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = -1.1 A
(Note 2)
-0.7
-1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = -1 A, di/dt = 100 A/ μ s
21
5
ns
nC
Notes:
1. R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 30 0 μ s, Duty cycle < 2.0%.
a. 65 °C/W when mounted on
a 1 in 2 pad of 2 oz copper.
b. 133 °C/W when mounted on a
minimum pad of 2 oz copper.
FDZ391P Rev.B1
2
www.fairchildsemi.com
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