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参数资料
| 型号： | FDZ7064AS |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench SyncFET BGA MOSFET |
| 中文描述： | 13.5 A, 30 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ULTRA THIN, 3.50 X 4 MM, 0.76 MM HEIGHT, BGA-30 |
| 文件页数： | 3/7页 |
| 文件大小： | 599K |
| 代理商： | FDZ7064AS |
3
www.fairchildsemi.com
FDZ7064AS Rev. A
F
Typical Characteristics
0
10
20
30
40
50
60
0
0.25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.5
0.75
1
I
D
,
3.0V
3.5V
2.5V
V
GS
=10.0V
6.0V
4.5V
0.75
1
1.25
1.5
1.75
2
2.25
0
10
20
I
D
, DRAIN CURRENT (A)
30
40
50
60
R
D
,
D
V
GS
= 3.0V
3.5V
4.0V
4.5V
6.0V
10.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (
°
C)
R
D
,
I
D
= 13.5A
V
GS
= 10V
0.0025
0.005
0.0075
0.01
0.0125
0.015
0.0175
0.02
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
=6.8A
T
A
= 125
°
C
T
A
= 25
°
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= 125
°
C
25
°
C
-55
°
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
°
C
25
°
C
-55
°
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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