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参数资料
| 型号： | FDZ7064AS |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench SyncFET BGA MOSFET |
| 中文描述： | 13.5 A, 30 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ULTRA THIN, 3.50 X 4 MM, 0.76 MM HEIGHT, BGA-30 |
| 文件页数： | 5/7页 |
| 文件大小： | 599K |
| 代理商： | FDZ7064AS |
5
www.fairchildsemi.com
FDZ7064AS Rev. A
F
Typical Characteristics
SyncFET Diode Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 12 FDZ7064AS.
Figure 12. FDZ7064AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an equivalent size
MOSFET produced without SyncFET .
Figure 13. Non-SyncFET (FDZ7064N) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and temperature.
C
TIME : 12.5ns/div
C
TIME : 12.5ns/div
0.00001
0.0001
0.001
0.01
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
T
A
= 125
°
C
T
A
= 25
°
C
T
A
= 100
°
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDZ7064N | 功能描述:MOSFET 30V N-Ch BGa MOSFET Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDZ7064N_Q | 功能描述:MOSFET 30V N-Ch BGa MOSFET Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDZ7064S | 功能描述:MOSFET 30V/12V NCh SYNCFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDZ7296 | 功能描述:MOSFET 30V N-Ch PowerTrench BGA MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDZX2-S4/4 | 制造商:Cooper Bussmann 功能描述:ADAPTR KIT FOR FD800 制造商:COOPER BUSSMANN 功能描述:ADAPTER KIT FOR FD800 |
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