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参数资料
| 型号： | FMM50-025TF |
| 厂商： | IXYS |
| 文件页数： | 2/2页 |
| 文件大小： | 0K |
| 描述： | MOSFET MOD N-CH 250V 30A I4-PAC |
| 标准包装： | 25 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 250V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 50 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 78nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4000pF @ 25V |
| 功率 - 最大： | 125W |
| 安装类型： | 通孔 |
| 封装/外壳： | i4-Pac?-5 |
| 供应商设备封装： | ISOPLUS i4-PAC? |
| 包装： | 管件 |
FMM50-025TF
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
ISOPLUS i4-Pak TM Outline
BV DSS
V GS = 0V, I D = 1mA
250
V
V GS(th)
I GSS
V DS = V GS , I D = 250 μ A
V GS = ± 20 V, V DS = 0V
2.5
4.5
± 100
V
nA
I DSS
R DS(on)
V DS = V DSS , V GS = 0V
V GS = 10V, I D = 25A, Note 1
T J = 125 ° C
1 μ A
150 μ A
60 m Ω
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
V DS = 10V, I D = 25A, Note 1
V GS = 0V, V DS = 25 V, f = 1 MHz
Resistive Switching Times
V GS = 15V, V DS = 0.5 V DSS , I D = 25A
R G = 5 Ω (External)
35
58
4000
410
60
14
25
47
25
78
S
pF
pF
pF
ns
ns
ns
ns
nC
Q gs
Q gd
V GS = 10V, V DS = 0.5
V DSS , I D = 25A
19
22
nC
nC
R thJC
1.0 ° C/W
R thCS
Source-Drain Diode
0.15
° C/W
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
I RM
Q RM
Note
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = 50A, V GS = 0V, Note 1
I F = 25A, -di/dt = 250A/ μ s
V R = 100V, V GS = 0V
1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2 %.
84
15.4
650
30
200
1.5
A
A
V
ns
A
nC
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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