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参数资料
| 型号： | FQB55N10TM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 55A D2PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 55A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 26 毫欧 @ 27.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 98nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2730pF @ 25V |
| 功率 - 最大： | 3.75W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FQB55N10TMDKR |
Package Marking and Ordering Information
Part Number
FQB55N10TM
Top Mark
FQB55N10
Package
D 2 -PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min .
Typ .
Max .
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 100 V, V GS = 0 V
V DS = 80 V, T C = 150°C
V GS = 25 V, V DS = 0 V
V GS = -25 V, V DS = 0 V
100
--
--
--
--
--
--
0.1
--
--
--
--
--
--
1
10
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th) Gate Threshold Voltage
V DS = V GS , I D = 250 μ A
2.0
--
4.0
V
R DS(on)
g FS
Static Drain-Source
On-Resistance
Forward Transconductance
V GS = 10 V, I D = 27.5 A
V DS = 40 V, I D = 27.5 A
--
--
0.021
38
0.026
--
?
S
Dynamic Characteristics
C iss Input Capacitance
C oss Output Capacitance
C rss Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
2100
640
130
2730
830
170
pF
pF
pF
Switching Characteristics
t d(on) Turn-On Delay Time
t r Turn-On Rise Time
t d(off) Turn-Off Delay Time
t f Turn-Off Fall Time
V DD = 50 V, I D = 55 A,
R G = 25 ?
( N ote 4 )
--
--
--
--
25
250
110
140
60
510
230
290
ns
ns
ns
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = 80 V, I D = 55 A,
V GS = 10 V
( Note 4 )
--
--
--
75
13
36
98
--
--
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S Maximum Continuous Drain-Source Diode Forward Current
--
--
55
A
I SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
220
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 55 A
V GS = 0 V, I S = 55 A,
dI F / dt = 100 A/ μ s
--
--
--
--
100
380
1.5
--
--
V
ns
nC
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 0.55 mH, I AS = 55 A, V DD = 25 V, R G = 25 ?, starting T J = 25°C.
3. I SD ≤ 55 A, di/dt ≤ 300 A/ μ s , V DD ≤ BV DSS, starting T J = 25°C.
4. Essentially independent of operating temperature.
?200 0 Fairchild Semiconductor Corporation
FQB55N10 Rev. C 1
2
www.fairchildsemi.com
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