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参数资料
| 型号： | FQB7P20TM_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 200V 7.3A D2PAK |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 690 毫欧 @ 3.65A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 770pF @ 25V |
| 功率 - 最大： | 3.13W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263-2 |
| 包装： | 标准包装 |
| 其它名称： | FQB7P20TM_F085DKR |
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Definition of Terms
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Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
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notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I41
FQB7P20TM_F085 Rev.A
7
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FQB7P20TM | MOSFET P-CH 200V 7.3A D2PAK |
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