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参数资料
| 型号： | FQD17P06TF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 12A DPAK |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 135 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 900pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | FQD17P06TFDKR |
Package Marking and Ordering Information
Part Number
FQD17P06 TM
FQ U 17P06 T U
Top Mark
FQD17P06
FQ U 17P06
Package
DPAK
IPAK
Packing Method
Tape and Reel
Tube
Reel Size
330 mm
N/A
Tape Width
16 mm
N/A
Quantity
2500 units
70 units
Electrical Characteristics
T C = 25°C unless otherwise noted .
Symbol
Parameter
Test Conditions
Min .
Typ .
Max .
Unit
Off Characteristics
BV DSS Drain-Source Breakdown Voltage
V GS = 0 V, I D = -250 μ A
-60
--
--
V
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
I D = -250 μ A, Referenced to 25°C
V DS = -60 V, V GS = 0 V
V DS = -48 V, T C = 125°C
V GS = -25 V, V DS = 0 V
V GS = 25 V, V DS = 0 V
--
--
--
--
--
-0.06
--
--
--
--
--
-1
-10
-100
100
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th) Gate Threshold Voltage
V DS = V GS , I D = -250 μ A
-2.0
--
-4.0
V
R DS(on)
g FS
Static Drain-Source
On-Resistance
Forward Transconductance
V GS = -10 V, I D = -6.0 A
V DS = -30 V, I D = -6.0 A
--
--
0.11
8.7
0.135
--
?
S
Dynamic Characteristics
C iss Input Capacitance
C oss Output Capacitance
C rss Reverse Transfer Capacitance
Switching Characteristics
t d(on) Turn-On Delay Time
t r Turn-On Rise Time
t d(off) Turn-Off Delay Time
V DS = -25 V, V GS = 0 V,
f = 1.0 MHz
V DD = -30 V, I D = -8.5 A,
R G = 25 ?
--
--
--
--
--
--
690
325
80
13
100
22
900
420
105
35
210
55
pF
pF
pF
ns
ns
ns
t f
Turn-Off Fall Time
(Note 4)
--
60
130
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = -48 V, I D = -17 A,
V GS = -10 V
(Note 4)
--
--
--
21
4.2
10
27
--
--
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S Maximum Continuous Drain-Source Diode Forward Current
--
--
-12
A
I SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-48
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = -12 A
V GS = 0 V, I S = -17 A,
dI F / dt = 100 A/ μ s
--
--
--
--
92
0.32
-4.0
--
--
V
ns
μ C
NOTES:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 2.4 mH, I AS = -12 A, V DD = -25 V, R G = 25 ? , starting T J = 25 ° C.
3. I SD ≤ -17 A, di/dt ≤ 3 00 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2001 Fairchild Semiconductor Corporation
FQD17P06 / FQU17P06 Rev C2
2
www.fairchildsemi.com
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相关代理商/技术参数 |
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|---|---|
| FQD17P06TF | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FQD17P06TM | 功能描述:MOSFET 60V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQD18N20V2 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:200V; On Resistance Rds(on):140mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:2.5W ;RoHS Compliant: Yes |
| FQD18N20V2_09 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| FQD18N20V2_13 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel QFET MOSFET |
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