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参数资料
| 型号： | FQD3N50CTF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 2.5A DPAK |
| 产品变化通告： | Passivation Material Change 14/May/2008 |
| 标准包装： | 2,000 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.5 欧姆 @ 1.25A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 365pF @ 25V |
| 功率 - 最大： | 35W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
Package Marking and Ordering Information
Part Number
FQU3N50C TU
Top Mark
FQU3N50C
Package
IPAK
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
75 units
Electrical Characteristics
T C = 25°C unless otherwise noted .
Symbol
Parameter
Test Conditions
Min .
Typ .
Max . Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 500 V, V GS = 0 V
V DS = 400 V, T C = 125°C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
500
--
--
--
--
--
--
0.7
--
--
--
--
--
--
1
10
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 1.25 A
V DS = 40 V, I D = 1.25 A
2.0
--
--
--
2.1
1.5
4.0
2.5
--
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
280
50
8.5
365
65
11
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 250 V, I D = 2.5A,
R G = 25 ?
V DS = 400 V, I D = 2.5A,
V GS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
10
25
35
25
10
1.5
5.5
30
60
80
60
13
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
2.5
10
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 2.5 A
V GS = 0 V, I S = 3 A,
dI F / dt = 100 A/ μ s
--
--
--
--
170
0.7
1.4
--
--
V
ns
μ C
NOTES:
1. Repetitive r ating : p ulse - width limited by maximum junction temperature .
2. L = 58 mH, I AS = 2.5 A, V DD = 50 V, R G = 25 ?, s tarting T J = 25°C .
3. I SD ≤ 2.5 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS, s tarting T J = 25°C .
4. Essentially independent of operating temperature.
?200 8 Fairchild Semiconductor Corporation
FQU3N50C Rev C 1
2
www.fairchildsemi.com
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| FQD3N50CTM | 功能描述:MOSFET 500V N-CHA NNEL MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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