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| 型号： | FQP3P50 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 500V 2.7A TO-220 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.9 欧姆 @ 1.35A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 23nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 660pF @ 25V |
| 功率 - 最大： | 85W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
Package Marking and Ordering Information
Part Number
FQP3P50
Top Mark
FQP3P50
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Elerical Characteristics
T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min .
Typ .
Max .
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = -250 μ A
I D = -250 μ A, Referenced to 25°C
V DS = -500 V, V GS = 0 V
V DS = -400 V, T C = 125°C
V GS = -30 V, V DS = 0 V
V GS = 30 V, V DS = 0 V
-500
--
--
--
--
--
--
0.42
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th) Gate Threshold Voltage
V DS = V GS , I D = -250 μ A
-3.0
--
-5.0
V
R DS(on)
g FS
Static Drain-Source
On-Resistance
Forward Transconductance
V GS = -10 V, I D = -1.35 A
V DS = -50 V, I D = -1.35 A
--
--
3.9
2.35
4.9
--
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
510
70
9.5
660
90
12
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = -250 V, I D = -2.7 A,
R G = 25 ?
( Note 4 )
--
--
--
--
12
56
35
45
35
120
80
100
ns
ns
ns
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = -400 V, I D = -2.7 A,
V GS = -10 V
( Note 4 )
--
--
--
18
3.6
9.2
23
--
--
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
-2.7
-10.8
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = -2.7 A
V GS = 0 V, I S = -2.7 A,
dI F / dt = 100 A/ μ s
--
--
--
--
270
1.5
-5.0
--
--
V
ns
μ C
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 62 mH, I AS = - 2 . 7 A, V DD = - 50 V, R G = 25 ?, starting T J = 25°C.
3. I SD ≤ - 2 . 7 A, di/dt ≤ 2 00 A/ μ s , V DD ≤ BV DSS, starting T J = 25°C.
4. Essentially independent of operating temperature.
?200 0 Fairchild Semiconductor Corporation
FQP3P50 Rev. C 1
2
www.fairchildsemi.com
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| FQP3P50 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P TO-220 |
| FQP3P50_Q | 功能描述:MOSFET 500V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQP44N08 | 功能描述:MOSFET 80V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQP44N10 | 功能描述:MOSFET 100V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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