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参数资料
| 型号： | FQPF9P25 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 250V 6A TO-220F |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 250V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 620 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 38nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1180pF @ 25V |
| 功率 - 最大： | 50W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 其它名称： | FQPF9P25-ND FQPF9P25FS |
Package Marking and Ordering Information
Part Number
FQPF 9 P2 5
Top Mark
FQPF 9 P2 5
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min .
Typ .
Max .
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = -250 μ A
I D = -250 μ A, Referenced to 25°C
V DS = -250 V, V GS = 0 V
V DS = -200 V, T C = 125°C
V GS = -30 V, V DS = 0 V
V GS = 30 V, V DS = 0 V
-250
--
--
--
--
--
--
-0.2
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th) Gate Threshold Voltage
V DS = V GS , I D = -250 μ A
-3.0
--
-5.0
V
R DS(on)
g FS
Static Drain-Source
On-Resistance
Forward Transconductance
V GS = -10 V, I D = -3.0 A
V DS = -40 V, I D = -3.0 A
--
--
0.48
4.8
0.62
--
?
S
Dynamic Characteristics
C iss Input Capacitance
C oss Output Capacitance
C rss Reverse Transfer Capacitance
V DS = -25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
910
170
27
1180
220
35
pF
pF
pF
Switching Characteristics
t d(on) Turn-On Delay Time
t r Turn-On Rise Time
t d(off) Turn-Off Delay Time
t f Turn-Off Fall Time
V DD = -125 V, I D = -9.4 A,
R G = 25 ?
( N ote 4 )
--
--
--
--
20
150
45
65
50
310
100
140
ns
ns
ns
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = -200 V, I D = -9.4 A,
V GS = -10 V
( Note 4 )
--
--
--
29
7.6
14
38
--
--
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S Maximum Continuous Drain-Source Diode Forward Current
--
--
-6.0
A
I SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-24
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = -6.0 A
V GS = 0 V, I S = -9.4 A,
dI F / dt = 100 A/ μ s
--
--
--
--
190
1.45
-5.0
--
--
V
ns
μ C
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 28.9 mH, I AS = - 6.0 A, V DD = - 50 V, R G = 25 ?, starting T J = 25°C.
3. I SD ≤ - 9.4 A, di/dt ≤ 300 A/ μ s , V DD ≤ BV DSS, starting T J = 25°C.
4. Essentially independent of operating temperature.
?200 0 Fairchild Semiconductor Corporation
FQPF9P25 Rev. C 0
2
www.fairchildsemi.com
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