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参数资料
| 型号： | FQT13N06LTF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 2.8A SOT-223 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 110 毫欧 @ 1.4A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.4nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 350pF @ 25V |
| 功率 - 最大： | 2.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-4 |
| 包装： | 标准包装 |
| 其它名称： | FQT13N06LTFDKR |
March 2013
FQT13N06 L
N -Channel QFET ? MOSFET
60 V, 2.8 A, 14 0 m Ω
Description
This N-Channel enhancement mode power MOSFET
is produced using Fairchild Semiconductor ? ’s
proprietary planar stripe and DMOS technology. This
advanced MOSFET technology has been especially
tailored to reduce on-state resistance, and to provide
superior switching performance and high avalanche
energy strength. These devices are suitable for
switched mode power supplies, audio amplifier, DC
motor control, and variable switching power
applications.
Features
? 2.8 A, 60 V, R DS(on) = 14 0 mΩ(Max.) @V GS =10 V, I D = 1.4 A
? Low G ate C harge ( Typ. 4.8 nC)
? Low Crss ( Typ. 17 pF)
? 100% A valanche T ested
D
!
D
"
S
G !
! "
"
"
G
Absolute Maximum Ratings
SOT-223
T C = 25°C unless otherwise noted
!
S
Symbol
V DSS
Drain-Source Voltage
Parameter
FQT13N06L
60
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 70°C)
2.8
2.24
A
A
I DM
Drain Current
- Pulsed
(Note 1)
11.2
A
V GSS
Gate-Source Voltage
± 20
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
85
2.8
0.21
7.0
2.1
0.017
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
-55 to +150
300
°C
°C
Thermal Characteristics
Symbol
R θ JA
Parameter
Thermal Resistance, Junction-to-Ambient *
Typ
--
Max
60
Unit
°C / W
* When mounted on the minimum pad size recommended (PCB Mount)
?20 0 1 Fairchild Semiconductor Corporation
FQ T13N06 L Rev. C0
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FQT13N06TF | 功能描述:MOSFET 60V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQT1N60C | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm |
| FQT1N60CTF_WS | 功能描述:MOSFET 600V 0.2A 11.5Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQT1N60CTF-WS | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm |
| FQT1N80 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET |
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