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参数资料
| 型号： | FQT1N60CTF_WS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 200MA SOT-223-4 |
| 产品目录绘图： | MOSFET SOT-223 Pkg |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 200mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11.5 欧姆 @ 100mA，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 170pF @ 25V |
| 功率 - 最大： | 2.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 标准包装 |
| 其它名称： | FQT1N60CTF_WSDKR |
FQ T1N60C
N-Channel QF E T ? MOSFET
600V, 0.2 A, 11.5 ?
Description
Features
March 2013
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor ? ’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
? 0. 2 A, 6 0 0 V, R DS(on) = 9.3 ? (
? Low G ate C harge ( Typ. nC)
? Low C rss ( Typ. pF)
? 100% A valanche T ested
? RoHS Compliant
.) @V GS =10 V , I D = 0. 1 A
D
D
S
G
G
SOT-223
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted*
Symbol
V DSS
Drain to Source Voltage
Parameter
FQT1N60C
600
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
-Continuous (T C = 25 o C)
-Continuous (T C = 100 o C)
±30
0.2
0.12
V
A
I DM
Drain Current
- Pulsed
(Note 1)
0.8
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
33
0.2
0.2
4.5
2.1
0.02
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
o C
o C
Thermal Characteristics
Symbol
R θ JA
Parameter
Thermal Resistance, Junction to Ambient*
Min.
-
Max.
60
Unit
o C/W
* When mounted on the minimum pad size recommended (PCB Mount)
?2007 Fairchild Semiconductor Corporation
FQT1N60C Rev. C0
1
www.fairchildsemi.com
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