- 您现在的位置：买卖IC网 > Datasheet目录435 > FQT1N60CTF_WS (Fairchild Semiconductor)MOSFET N-CH 600V 200MA SOT-223-4 Datasheet资料下载
参数资料
| 型号： | FQT1N60CTF_WS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 200MA SOT-223-4 |
| 产品目录绘图： | MOSFET SOT-223 Pkg |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 200mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11.5 欧姆 @ 100mA，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 170pF @ 25V |
| 功率 - 最大： | 2.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 标准包装 |
| 其它名称： | FQT1N60CTF_WSDKR |
Package Marking and Ordering Information T C = 25 o C unless otherwise noted
Device Marking
FQT1N60C
Device
FQT1N60C
Package
SOT-223
Reel Size
330mm
Tape Width
12mm
Quantity
4000
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
I D = 250 μ A, Referenced to 25 C
BV DSS
? BV DSS
/ ? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, V GS = 0V, T J = 25 o C
o
V DS = 600V, V GS = 0V
V DS = 480V, T C = 125 o C
V GS = ±30V, V DS = 0V
600
-
-
-
-
-
0.6
-
-
-
-
-
25
250
±100
V
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
Gate Threshold Voltage
Static Drain to Source On Resistance
V GS = V DS , I D = 250 μ A
V GS = 10V, I D = 0.1A
2.0
-
-
9.3
4.0
11.5
V
?
g FS
Forward Transconductance
V DS = 40V, I D = 0.1A
(Note 4)
-
0.75
-
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25V, V GS = 0V
f = 1MHz
-
-
-
130
19
3.5
170
25
6
pF
pF
pF
Q g
Q gs
Q gd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 480V, I D = 1A
V GS = 10V
(Note 4, 5)
-
-
-
4.8
0.7
2.7
6.2
-
-
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 300V, I D = 1A
R G = 25 ?
(Note 4, 5)
-
-
-
-
7
21
13
27
24
52
36
64
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
0.2
0.8
A
A
V SD
Drain to Source Diode Forward Voltage
V GS = 0V, I SD = 0.2A
-
-
1.4
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I SD = 1A
dI F /dt = 100A/ μ s
(Note 4)
-
-
190
0.53
-
-
ns
μ C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 59mH, I AS = 1.1A, V DD = 50V, R G = 25 ? , Starting T J = 25 ° C
3. I SD ≤ 0.2A, di/dt ≤ 200A/ μ s, V DD ≤ BV DSS , Starting T J = 25 ° C
4. Pulse Test: Pulse width ≤ 300 μ s, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
?2007 Fairchild Semiconductor Corporation
FQT1N60C Rev. C0
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FQT3P20TF_SB82100 | MOSFET P-CH 200V 670MA SOT-223-4 |
| FQT4N20LTF | MOSFET N-CH 200V 0.85A SOT-223 |
| FQT4N25TF | MOSFET N-CH 250V 0.83A SOT-223 |
| FQT5P10TF | MOSFET P-CH 100V 1A SOT-223 |
| FQT7N10LTF | MOSFET N-CH 100V 1.7A SOT-223 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FQT1N80 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET |
| FQT1N80TF | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FQT1N80TF_WS | 功能描述:MOSFET 800V 0.2A 20Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQT1N80TFWS | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET |
| FQT26N03L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223 |
发布紧急采购，3分钟左右您将得到回复。