参数资料
型号: FQT7N10LTF
厂商: Fairchild Semiconductor
文件页数: 2/8页
文件大小: 0K
描述: MOSFET N-CH 100V 1.7A SOT-223
产品培训模块: High Voltage Switches for Power Processing
产品目录绘图: MOSFET SOT-223 Pkg
标准包装: 1
系列: QFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 1.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 350 毫欧 @ 850mA,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 6nC @ 5V
输入电容 (Ciss) @ Vds: 290pF @ 25V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223-3
包装: 标准包装
产品目录页面: 1604 (CN2011-ZH PDF)
其它名称: FQT7N10LTFDKR
Electrical Characteristics
T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 100 V, V GS = 0 V
V DS = 80 V, T C = 125°C
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
100
--
--
--
--
--
--
0.1
--
--
--
--
--
--
1
10
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 0.85 A
V GS = 5 V, I D = 0.85 A
1.0
--
--
0.275
0.300
2.0
0.35
0.38
V
?
g FS
Forward Transconductance
V DS = 30 V, I D = 0.85 A
(Note 4)
--
2.75
--
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
220
55
12
290
72
15
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 50 V, I D = 7.3 A,
R G = 25 ?
V DS = 80 V, I D = 7.3 A,
V GS = 5 V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
9
100
17
50
4.6
1.0
2.6
30
210
45
110
6.0
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
1.7
6.8
A
A
V SD
t rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V GS = 0 V, I S = 1.7 A
V GS = 0 V, I S = 7.3 A,
--
--
--
70
1.5
--
V
ns
Q rr
Reverse Recovery Charge
dI F / dt = 100 A/ μ s
(Note 4)
--
140
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 26mH, I AS = 1.7A, V DD = 25V, R G = 25 ?, Starting T J = 25°C
3. I SD ≤ 7.3A, di/dt ≤ 300A/ μ s, V DD ≤ BV DSS, Starting T J = 25°C
4. Pulse Test : Pulse width ≤ 300 μ s, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
?2001 Fairchild Semiconductor Corporation
FQT7N10L Rev. C0
www.fairchildsemi.com
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