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参数资料
| 型号： | FQU10N20CTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 7.8A IPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 70 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 360 毫欧 @ 3.9A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 510pF @ 25V |
| 功率 - 最大： | 50W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
Package Marking and Ordering Information
Device Marking
FQD10N20C
FQU10N20C
Device
FQD10N20CTM
FQU10N20CTU
Package
D-PAK
I-PAK
Reel Size
330 mm
Tube
Tape Width
16 mm
N/A
Quantity
2500 units
70 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 200 V, V GS = 0 V
V DS = 160 V, T C = 125°C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
200
--
--
--
--
--
--
0.28
--
--
--
--
--
--
10
100
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 3.9 A
V DS = 40 V, I D = 3.9 A
2.0
--
--
--
0.29
5.6
4.0
0.36
--
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
395
97
40.5
510
125
53
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 100 V, I D = 9.5 A,
R G = 25 Ω
V DS = 160 V, I D = 9.5 A,
V GS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
11
92
70
72
20
3.1
10.5
30
190
150
160
26
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
7.8
31.2
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 7.8 A
V GS = 0 V, I S = 9.5 A,
dI F / dt = 100 A/ μ s
--
--
--
--
158
0.97
1.5
--
--
V
ns
μ C
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 5.2 mH, I AS = 7.8 A, V DD = 50 V, R G = 25 Ω, starting T J = 25°C.
3. I SD ≤ 9.5 A, di/dt ≤ 300 A/ μ s, V DD ≤ BV DSS, starting T J = 25°C.
4. Essentially independent of operating temperature.
?2003 Fairchild Semiconductor Corporation
FQD10N20C / FQU10N20C Rev. C2
2
www.fairchildsemi.com
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