参数资料
型号: FQU10N20CTU
厂商: Fairchild Semiconductor
文件页数: 7/9页
文件大小: 0K
描述: MOSFET N-CH 200V 7.8A IPAK
产品培训模块: High Voltage Switches for Power Processing
标准包装: 70
系列: QFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 200V
电流 - 连续漏极(Id) @ 25° C: 7.8A
开态Rds(最大)@ Id, Vgs @ 25° C: 360 毫欧 @ 3.9A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 26nC @ 10V
输入电容 (Ciss) @ Vds: 510pF @ 25V
功率 - 最大: 50W
安装类型: 通孔
封装/外壳: TO-251-3 短引线,IPak,TO-251AA
供应商设备封装: I-Pak
包装: 管件
Mechanical Dimensions
TO-252 3L (DPAK)
Figure 16. TO252 (D-PAK), Molded, 3 Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor ’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
Dimension in Millimeters
?2003 Fairchild Semiconductor Corporation
FQD10N20C / FQU10N20C Rev. C2
7
www.fairchildsemi.com
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