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参数资料
| 型号： | FQU1N80TU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 800V 1A IPAK |
| 标准包装： | 5,040 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 800V |
| 电流 - 连续漏极(Id) @ 25° C： | 1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 195pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
Package Marking and Ordering Information
Part Number
FQD1N80TM
FQ U 1N80T U
Top Mark
FQD1N80
FQ U 1N80
Package
D - PAK
I- PAK
Packing Method
Tape and Reel
Tube
Reel Size
330 mm
N/A
Tape Width
16 mm
N/A
Quantity
2500 units
70 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min .
Typ .
Max .
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 800 V, V GS = 0 V
V DS = 640 V, T C = 125°C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
800
--
--
--
--
--
--
1.0
--
--
--
--
--
--
10
100
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th) Gate Threshold Voltage
V DS = V GS , I D = 250 μ A
3.0
--
5.0
V
R DS(on)
g FS
Static Drain-Source
On-Resistance
Forward Transconductance
V GS = 10 V, I D = 0.5 A
V DS = 50 V, I D = 0.5 A
--
--
15.5
0.75
20
--
?
S
Dynamic Characteristics
C iss Input Capacitance
C oss Output Capacitance
C rss Reverse Transfer Capacitance
Switching Characteristics
t d(on) Turn-On Delay Time
t r Turn-On Rise Time
t d(off) Turn-Off Delay Time
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
V DD = 400 V, I D = 1.0 A,
R G = 25 ?
--
--
--
--
--
--
150
20
2.7
10
25
15
195
26
3.5
30
60
40
pF
pF
pF
ns
ns
ns
t f
Turn-Off Fall Time
(Note 4 )
--
25
60
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = 640 V, I D = 1.0 A,
V GS = 10 V
(Note 4 )
--
--
--
5.5
1.1
3.3
7.2
--
--
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S Maximum Continuous Drain-Source Diode Forward Current
--
--
1.0
A
I SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
4.0
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 1.0 A
V GS = 0 V, I S = 1.0 A,
dI F / dt = 100 A/ μ s
--
--
--
--
300
0.6
1.4
--
--
V
ns
μ C
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 170 mH, I AS = 1.0 A, V DD = 50 V, R G = 25 ?, starting T J = 25°C.
3. I SD ≤ 1.0 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS, starting T J = 25°C.
4. Essentially independent of operating temperature.
?2009 Fairchild Semiconductor Corporation
FQD1N80 / FQU1N80 Rev. C2
2
www.fairchildsemi.com
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