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参数资料
| 型号： | FS30ASJ-06F |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-3A, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 103K |
| 代理商： | FS30ASJ-06F |
FS30ASJ-06F
Rev.1.00, Aug.20.2004, page 2 of 6
Electrical Characteristics
(Tch = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Drain-source breakdown voltage
V(BR)DSS
60
—
V
ID = 1 mA, VGS = 0 V
Gate-source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0 V
Drain-source leakage current
IDSS
—
100
AVDS = 60 V, VGS = 0 V
Gate-source leakage current
IGSS
——
±10
AVGS = ±20 V, VDS = 0 V
Gate-source threshold voltage
VGS(th)
1.0
1.5
2.0
V
ID = 1 mA, VDS = 10 V
Drain-source on-state resistance
rDS(ON)
—18
22
m
ID = 15 A, VGS = 10 V
Drain-source on-state resistance
rDS(ON)
—22
28
m
ID = 15 A, VGS = 4 V
Drain-source on-state voltage
VDS(ON)
—
0.27
0.33
V
ID = 15 A, VGS = 10 V
Forward transfer admittance
| yfs |—
38
—
S
ID = 15 A, VDS = 10 V
Input capacitance
Ciss
—
2600
—
pF
Output capacitance
Coss
—
385
—
pF
Reverse transfer capacitance
Crss
—
200
—
pF
VDS = 10 V, VGS = 0 V,
f = 1MHz
Turn-on delay time
td(on)
—13—
ns
Rise time
tr
—45—
ns
Turn-off delay time
td(off)
—
240
—
ns
Fall time
tf
—
100
—
ns
VDD = 30 V, ID = 15 A,
VGS = 10 V,
RGEN = RGS = 50
Source-drain voltage
VSD
—1.0
1.5
V
IS = 15 A, VGS = 0 V
Thermal resistance
Rth(ch-c)
—
2.5
°C/W
Channel to case
Reverse recovery time
trr
—50—
ns
IS = 30 A, dis/dt = –100 A/
s
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FS30ASJ-06F(#B00) | 制造商:Renesas Electronics Corporation 功能描述: |
| FS30ASJ-06F-T13 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
| FS30ASJ2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-252 |
| FS30ASJ-2 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH-SPEED SWITCHING USE |
| FS30ASJ-2-T13 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
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