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参数资料
| 型号： | FS30ASJ-06F |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-3A, 3 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 103K |
| 代理商： | FS30ASJ-06F |
FS30ASJ-06F
Rev.1.00, Aug.20.2004, page 4 of 6
Transfer Characteristics (Typical)
Gate-Source Voltage VGS (V)
Drain
Current
I
D
(A)
Forward Transfer Admittance vs.
Drain Current (Typical)
Drain Current ID (A)
Forward
Transfer
Admittance
|
y
fs
|
(S)
0
10
20
30
40
50
02468
10
100
10
1
24
7
2
35
2
4
35 7
100
101
2
3
4
5
7
102
2
3
4
5
7
Tc = 25°C
VDS = 10V
Pulse Test
Tc = 25°C
VDS = 10V
Pulse Test
75°C
125°C
Switching Characteristics (Typical)
Drain-Source Voltage VDS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
Drain Current ID (A)
Capacitance
(pF)
Switching
Time
(ns)
Gate-Source Voltage vs.
Gate Charge (Typical)
Gate Charge Qg (nC)
Gate-Source
Voltage
V
GS
(V)
Source-Drain Diode Forward
Characteristics (Typical)
Source-Drain Voltage VSD (V)
Source
Current
I
S
(A)
103
104
2
3
5
7
102
2
3
5
7
100 22
1
57 10
10
2
3
57
3
10–1 25 7
3
Ciss
Coss
Crss
102
101
2
3
4
5
7
103
2
3
4
5
7
100
10
1
24
7
2
35
2
4
35 7
0
2
4
6
8
10
60
10
20
40
80
100
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
2.0
Tch = 25°C
VDD = 30V
VGS = 10V
RGEN = RGS = 50
Tch = 25°C
f = 1MHz
VGS = 0V
td(off)
td(on)
tr
tf
VDS = 10V
20V
40V
Tch = 25°C
ID = 30A
VGS = 0V
Pulse Test
Tc = 125°C
75°C
25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FS30ASJ-06F(#B00) | 制造商:Renesas Electronics Corporation 功能描述: |
| FS30ASJ-06F-T13 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
| FS30ASJ2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-252 |
| FS30ASJ-2 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH-SPEED SWITCHING USE |
| FS30ASJ-2-T13 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
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