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参数资料
| 型号： | FS30ASJ-06F |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-3A, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 103K |
| 代理商： | FS30ASJ-06F |
FS30ASJ-06F
Rev.1.00, Aug.20.2004, page 3 of 6
Performance Curves
Drain Power Dissipation Derating Curve
Case Temperature Tc (°C)
Drain
Power
Dissipation
P
D
(W)
Maximum Safe Operating Area
Drain-Source Voltage VDS (V)
Drain
Current
I
D
(A)
0
20
40
60
80
100
0200
50
100
150
100
3
5
7
101
2
3
5
7
102
7
2
3
2
3
5
2
10 0 2 3
7101
5
55
7102
3
7
tw = 10
s
100
s
10ms
1ms
DC
Tc = 25°C
Single Pulse
Output Characteristics (Typical)
Drain
Current
I
D
(A)
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
Drain
Current
I
D
(A)
Drain-Source Voltage VDS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
Gate-Source Voltage VGS (V)
Drain-Source
On-State
Voltage
V
DS(ON)
(V)
On-State Resistance vs.
Drain Current (Typical)
Drain Current ID (A)
Drain-Source
On-State
Resistance
r
DS(ON)
(m
)
0
10
20
30
40
50
0
1.0
2.0
3.0
4.0
5.0
8V
3V
3.5V
2.5V
6V
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
2.5V
0
10
20
30
40
50
101
102
103
37
7
5
2
100
37
5
23
2
5
10V
0
0.4
0.8
1.2
1.6
2.0
02468
10
30A
10A
VGS = 4V
Tc = 25°C
Pulse Test
ID = 50A
PD = 50W
Tc = 25°C
Pulse Test
VGS = 10V
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
VGS = 10V
3V
3.5V
4V
5V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FS30ASJ-06F(#B00) | 制造商:Renesas Electronics Corporation 功能描述: |
| FS30ASJ-06F-T13 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
| FS30ASJ2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-252 |
| FS30ASJ-2 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH-SPEED SWITCHING USE |
| FS30ASJ-2-T13 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
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