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参数资料
| 型号： | FS30ASJ-06F |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-3A, 3 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 103K |
| 代理商： | FS30ASJ-06F |
FS30ASJ-06F
Rev.1.00, Aug.20.2004, page 5 of 6
Channel Temperature Tch (°C)
Drain-Source
On-State
Resistance
r
DS(ON)
(t°C)
Threshold Voltage vs.
Channel Temperature (Typical)
Gate-Source
Threshold
Voltage
V
GS(th)
(V)
On-State Resistance vs.
Channel Temperature (Typical)
Drain-Source
On-State
Resistance
r
DS(ON)
(25°C)
Channel Temperature Tch (°C)
10–1
100
2
3
4
5
7
101
2
3
4
5
7
–50
0
50
100
150
0
0.8
1.6
2.4
3.2
4.0
–50
0
50
100
150
VGS = 10V
ID = 15A
Pulse Test
VDS = 10V
ID = 1mA
Transient Thermal Impedance Characteristics
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Pulse Width tw (s)
Transient
Thermal
Impedance
Zth(ch–c)
(°C/W)
Drain-Source
Breakdown
Voltage
V
(BR)DSS
(t°C)
Drain-Source
Breakdown
Voltage
V
(BR)DSS
(25°C)
Switching Time Measurement Circuit
Switching Waveform
0.4
0.6
0.8
1.0
1.2
1.4
–50
0
50
100
150
10–4
101
7
5
3
2
100
7
5
3
2
5
3
27
5
3
27
5
3
27
5
3
27
100
10–3
10–2
10–1
10 –1
Single Pulse
0.5
0.2
0.05
0.01
VGS = 0V
ID = 1mA
D = 1.0
0.02
0.1
tr
td(on)
Vin
90%
10%
Vout
td(off)
90%
10%
tf
Vin Monitor
D.U.T.
RL
VDD
Vout
Monitor
RGEN
RGS
PDM
tw
D =
T
tw
T
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FS30ASJ-06F(#B00) | 制造商:Renesas Electronics Corporation 功能描述: |
| FS30ASJ-06F-T13 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
| FS30ASJ2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-252 |
| FS30ASJ-2 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH-SPEED SWITCHING USE |
| FS30ASJ-2-T13 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
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