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参数资料
| 型号： | FSAM30SH60A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 11/15页 |
| 文件大小： | 0K |
| 描述： | SMART POWER MODULE 30A SPM32-AA |
| 产品培训模块： | Smart Power |
| 标准包装： | 8 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 30A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | SPM32AA |
| 产品目录页面： | 1222 (CN2011-ZH PDF) |
| 其它名称： | FSAM30SH60A_NL FSAM30SH60A_NL-ND |
P5
Input Signal
Internal IGBT
Gate-Emitter Voltage
SC Detection
P1
Output Current
P4
P6
P7
P2
SC Reference
Sensing Voltage
RC Filter Delay
Voltage (0.5V)
Fault Output Signal
P3
P8
P1 : Normal operation: IGBT ON and conducting current.
P2 : Short-circuit current detection.
P3 : IGBT gate interrupt / fault signal generation.
P4 : IGBT is slowly turned off.
P5 : IGBT OFF signal.
P6 : IGBT ON signal: but IGBT cannot be turned on during the fault-output activation.
P7 : IGBT OFF state.
P8 : Fault-output reset and normal operation start.
Figure 11. Short-Circuit Protection (Low-Side Operation Only)
5V
MCU
100 ?
100 ?
100 ?
R PF =
4.7 k ?
R PL =
2 k ?
R PH =
4.7 k ?
SPM
IN (UH) , IN (VH) , IN (WH)
IN (UL) , IN (VL) , IN (WL)
V FO
1 nF
C PF =
1 nF
C PL =
0.47 nF
C PH =
1.2 nF
COM
Figure 12. Recommended MCU I/O Interface Circuit
3rd Notes:
1. It would be recommended that by-pass capacitors for the gating input signals, IN (UL) , IN (VL) , IN (WL) , IN (UH) , IN (VH) and IN (WH) should be placed on the Motion
SPM ? 2 product pins and on the both sides of MCU and Motion SPM 2 Product for the fault output signal, V FO , as close as possible.
2. The logic input works with standard CMOS or LSTTL outputs.
3. R PL C PL /R PH C PH /R PF C PF coupling at each Motion SPM 2 product input is recommended in order to prevent input/output signals’ oscillation and it should be as
close as possible to each of Motion SPM 2 Product pins.
?2003 Fairchild Semiconductor Corporation
FSAM30SH60A Rev. C8
11
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FSAM30SH60A | 制造商:Fairchild Semiconductor Corporation 功能描述:POWER SUPPLY IC 制造商:Fairchild Semiconductor Corporation 功能描述:Power Supply IC |
| FSAM30SH60A_03 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:SPMTM (Smart Power Module) |
| FSAM30SM60A | 功能描述:IGBT 模块 600V/30A/ SPM2 RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSAM30SM60SL | 功能描述:IGBT 模块 600V/30A Smart Power RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSAM50SM60A | 功能描述:IGBT 晶体管 600V -50A SMART POWER MODULE RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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