参数资料
型号: FSB50450
厂商: Fairchild Semiconductor
文件页数: 4/9页
文件大小: 0K
描述: IC SMART POWER MOD 3A SPM23-AA
产品培训模块: Smart Power
产品变化通告: Pkg Pin Hole Shape Change 02/June/2008
标准包装: 15
系列: SPM™
类型: FET
配置: 3 相
电流: 1.5A
电压: 500V
电压 - 隔离: 1500Vrms
封装/外壳: SPM23AA
配用: FEB155-ND - BOARD EVAL FOR FSB50450
Electrical Characteristics (T J = 25°C, V CC = V BS = 15 V unless otherwise specified.)
Inverter Part (each MOSFET unless otherwise specified.)
Symbol
Parameter
Conditions
Min Typ Max
Unit
BV DSS
I DSS
R DS(on)
V SD
t ON
t OFF
t rr
E ON
E OFF
Drain - Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Static Drain - Source
Turn-On Resistance
Drain - Source Diode
Forward Voltage
Switching Times
V IN = 0 V, I D = 250 ? A (2nd Note 1)
V IN = 0 V, V DS = 500 V
V CC = V BS = 15 V, V IN = 5 V, I D = 0.5 A
V CC = V BS = 15V, V IN = 0 V, I D = -0.5 A
V PN = 300 V, V CC = V BS = 15 V, I D = 0.5 A
V IN = 0 V ? 5 V, Inductive Load L = 3 mH
High- and Low-Side MOSFET Switching
(2nd Note 2)
500
-
-
-
-
-
-
-
-
-
-
1.9
-
1152
600
185
85
11
-
250
2.4
1.2
-
-
-
-
-
V
? A
?
V
ns
ns
ns
? J
? J
RBSOA
Reverse Bias Safe Oper-
ating Area
V PN = 400 V, V CC = V BS = 15 V, I D = I DP , V DS = BV DSS ,
T J = 150°C
High- and Low-Side MOSFET Switching (2nd Note 3)
Full Square
Control Part (each HVIC unless otherwise specified.)
Symbol
Parameter
Conditions
Min Typ Max
Unit
I QCC
I QBS
Quiescent V CC Current
Quiescent V BS Current
V CC = 15 V,
V IN = 0 V
V BS = 15 V,
V IN = 0 V
Applied Between V CC and COM
Applied Between V B(U) - U,
V B(V) - V, V B(W) - W
-
-
-
-
160
100
? A
? A
UV CCD
UV CCR
UV BSD
UV BSR
Low-Side Under-Voltage
Protection (Figure 8)
High-Side Under-Voltage
Protection (Figure 9)
V CC Under-Voltage Protection Detection Level
V CC Under-Voltage Protection Reset Level
V BS Under-Voltage Protection Detection Level
V BS Under-Voltage Protection Reset Level
7.4
8.0
7.4
8.0
8.0
8.9
8.0
8.9
9.4
9.8
9.4
9.8
V
V
V
V
V IH
V IL
I IH
I IL
ON Threshold Voltage
OFF Threshold Voltage
Input Bias Current
Logic HIGH Level
Logic LOW Level
V IN = 5 V
V IN = 0 V
Applied between IN and COM
Applied between IN and COM
3.0
-
-
-
-
-
10
-
-
0.8
20
2
V
V
? A
? A
2nd Notes:
1. BV DSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM ? 5 product. V PN should be sufficiently less than this
value considering the effect of the stray inductance so that V PN should not exceed BV DSS in any case.
2. t ON and t OFF include the propagation delay of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field
applications due to the effect of different printed circuit boards and wirings. Please see Figure 4 for the switching time definition with the switching test circuit of Figure 5.
3. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 5 for the RBSOA test
circuit that is same as the switching test circuit.
?2007 Fairchild Semiconductor Corporation
FSB50450 Rev. C4
4
www.fairchildsemi.com
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