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参数资料
| 型号： | FSB50825US |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC POWER MOD SPM 250V 4A SPM23BD |
| 标准包装： | 1 |
| 系列： | SPM™ |
| 类型： | FET |
| 配置： | 3 相 |
| 电流： | 4A |
| 电压： | 250V |
| 电压 - 隔离： | 1500Vrms |
| 封装/外壳： | SPM23BD |
| 产品目录页面： | 1223 (CN2011-ZH PDF) |
| 其它名称： | FSB50825USDKR |
January 2014
FSB50825US
Motion SPM ? 5 Series
Features
? UL Certified No. E209204 (UL1557)
? 250 V R DS(on) = 0.45 ?? Max ? FRFET MOSFET 3-
Phase Inverter with Gate Drivers and Protection
? Separate Open-Source Pins from Low-Side MOSFETs
for Three-Phase Current-Sensing
? Active-HIGH Interface, Works with 3.3 / 5 V Logic,
Schmitt-trigger Input
? Optimized for Low Electromagnetic Interference
? HVIC for Gate Driving and Under-Voltage Protection
? Isolation Rating: 1500 V rms / min.
? Moisture Sensitive Level (MSL) 3
? RoHS Compliant
Applications
? 3-Phase Inverter Driver for Small Power AC Motor
Drives
Package Marking & Ordering Information
Related Source
? AN-9082 - Motion SPM5 Series Thermal Performance
by Contact Pressure
General Description
The FSB50825US is an advanced Motion SPM ? 5
module providing a fully-featured, high-performance
inverter output stage for AC Induction, BLDC and PMSM
motors. These modules integrate optimized gate drive of
the built-in MOSFETs (FRFET ? technology) to minimize
EMI and losses, while also providing multiple on-module
protection features including under-voltage lockouts. The
built-in high-speed HVIC requires only a single supply
voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's internal
MOSFETs. Separate open-source MOSFET terminals
are available for each phase to support the widest
variety of control algorithms.
Device Marking
FSB50825US
Device
FSB50825US
Package
SPM5H-023
Reel Size
330mm
Packing Type
Tape-Reel
Quantity
450
?2010 Fairchild Semiconductor Corporation
FSB50825US Rev. C4
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FSB52006S | MODULE SPM SMART PWR SPM23-BA |
| FSBB15CH60C | IC POWER MOD SPM 600V SPM27CC |
| FSBB15CH60F | MODULE SPM 600V SPM27-CA |
| FSBB20CH60CL | SMART POWER MODULE 20A SPM27-CB |
| FSBB20CH60CT | MODULE ADV MOTION SPM SPM27-CC |
相关代理商/技术参数 |
参数描述 |
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| FSB52006S | 功能描述:IGBT 模块 60V 1A 15kHz RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB560 | 功能描述:两极晶体管 - BJT NPN Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| FSB560_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN Low Saturation Transistor |
| FSB560_Q | 功能描述:两极晶体管 - BJT NPN Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| FSB560A | 功能描述:两极晶体管 - BJT NPN Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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