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| 型号： | FSB50550U |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IC SMART POWER MOD 2A SPM22-AD |
| 标准包装： | 15 |
| 系列： | SPM® |
| 类型： | FET |
| 配置： | 3 相 |
| 电流： | 2A |
| 电压： | 500V |
| 电压 - 隔离： | 1500Vrms |
| 封装/外壳： | SPM22AD |
| 产品目录页面： | 1222 (CN2011-ZH PDF) |
February 2009
FSB50550U
Smart Power Module (SPM ? )
Features
? 500V R DS(on) =1.4 Ω( max ) 3-phase FRFET inverter including
high voltage integrated circuit (HVIC)
? 3 divided negative dc-link terminals for inverter current sens-
ing applications
? HVIC for gate driving and undervoltage protection
? 3/5V CMOS/TTL compatible, active-high interface
? Optimized for low electromagnetic interference
? Isolation voltage rating of 1500Vrms for 1min.
General Description
FSB50550U is a tiny smart power module (SPM ? ) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50550U
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50550U is the most solution
for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
Absolute Maximum Ratings
Symbol
V PN
I D25
I D80
I DP
P D
V CC
V BS
V IN
T J
T STG
R θ JC
V ISO
Parameter
DC Link Input Voltage,
Drain-source Voltage of each FRFET
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Peak
Maximum Power Dissipation
Control Supply Voltage
High-side Bias Voltage
Input Signal Voltage
Operating Junction Temperature
Storage Temperature
Junction to Case Thermal Resistance
Isolation Voltage
Conditions
T C = 25°C
T C = 80°C
T C = 25°C, PW < 100 μ s
T C = 25°C, Each FRFET
Applied between V CC and COM
Applied between V B(U) -U, V B(V) -V, V B(W) -W
Applied between IN and COM
Each FRFET under inverter operating con-
dition (Note 1)
60Hz, Sinusoidal, 1 minute, Connection
pins to heatsink
Rating
500
2.0
1.5
5
14.5
20
20
-0.3 ~ VCC+0.3
-40 ~ 150
-50 ~ 150
8.6
1500
Units
V
A
A
A
W
V
V
V
°C
°C
°C/W
V rms
?2009 Fairchild Semiconductor Corporation
FSB50550U Rev. A
1
www.fairchildsemi.com
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相关代理商/技术参数 |
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|---|---|
| FSB50550US | 功能描述:IGBT 模块 500V, 1.2A RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50550UTD | 功能描述:IGBT 模块 Smart Power Module RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50660SF | 功能描述:分立半导体模块 Motion SPM 5 SuperFET Series RoHS:否 制造商:Fairchild Semiconductor 产品: 类型: 安装风格: 封装 / 箱体: 封装:Tube |
| FSB50660SFT | 制造商:Fairchild Semiconductor Corporation 功能描述:600V, 1A, 3 PHASE, SUPERFET SMART POWER MODULE - Rail/Tube 制造商:Fairchild Semiconductor Corporation 功能描述:MOD SPM 600V 3.1A SPM5N-023 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / 600V, 1A, 3 PHASE, SuperFET SMART POWER MODULE |
| FSB50760SF | 功能描述:分立半导体模块 Motion SPM 5 SuperFET Series RoHS:否 制造商:Fairchild Semiconductor 产品: 类型: 安装风格: 封装 / 箱体: 封装:Tube |
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