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参数资料
| 型号： | FSB50550U |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | IC SMART POWER MOD 2A SPM22-AD |
| 标准包装： | 15 |
| 系列： | SPM® |
| 类型： | FET |
| 配置： | 3 相 |
| 电流： | 2A |
| 电压： | 500V |
| 电压 - 隔离： | 1500Vrms |
| 封装/外壳： | SPM22AD |
| 产品目录页面： | 1222 (CN2011-ZH PDF) |
Recommended Operating Conditions
Symbol
V PN
V CC
V BS
V IN(ON)
V IN(OFF)
t dead
f PWM
Parameter
Supply Voltage
Control Supply Voltage
High-side Bias Voltage
Input ON Threshold Voltage
Input OFF Threshold Voltage
Blanking Time for Preventing
Arm-short
PWM Switching Frequency
Conditions
Applied between P and N
Applied between V CC and COM
Applied between V B and output(U, V, W)
Applied between IN and COM
V CC =V BS =13.5 ~ 16.5V, T J ≤ 150°C
T J ≤ 150°C
Min.
-
13.5
13.5
3.0
0
1.0
-
Value
Typ.
300
15
15
-
-
-
15
Max.
400
16.5
16.5
V CC
0.6
-
-
Units
V
V
V
V
V
μ s
kHz
These values depend on PWM
control algorithm
15-V Line
R 2
R 1
D 1
P
V DC
HIN
LIN
Output
Note
0
0
Z
Both FRFET Off
Micom
R 5
C 5
VCC
HIN
LIN
COM
VB
HO
VS
LO
Inverter
Output
C 3
0
1
1
0
0
V DC
Low-side FRFET On
High-side FRFET On
N
R 3
1
1
Forbidden
Shoot-through
10 μ F
C 2
C 1
One-Leg Diagram of SPM
Open
Open
Z
Same as (0, 0)
* Example of bootstrap paramters:
C 1 = C 2 = 1 μ F ceramic capacitor,
R 1 = 56 Ω, R 2 = 20 Ω
Note:
(1) It is recommended the bootstrap diode D 1 to have soft and fast recovery characteristics with 600-V rating
(2) Parameters for bootsrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above.
(3) RC coupling(R 5 and C 5 ) at each input (indicated as dotted lines) may be used to prevent improper input signal due to surge noise. Signal input of SPM ? is compatible with
standard CMOS or LSTTL outptus.
(4) Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge voltage. Bypass capacitors such as C 1 , C 2
and C 3 should have good high-frequency characteristics to absorb high-frequency ripple current.
Figure 2. Recommended CPU Interface and Bootstrap Circuit with Parameters
14.50
3.80
Note:
MOSFET
Case Temperature (Tc)
Detecting Point
Attach the thermocouple on top of the heatsink-side of SPM ? (between SPM ? and heatsink if applied) to get the correct temperature measurement.
Figure 3. Case Temperature Measurement
FSB50550U Rev. A
4
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FSB50550US | 功能描述:IGBT 模块 500V, 1.2A RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50550UTD | 功能描述:IGBT 模块 Smart Power Module RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50660SF | 功能描述:分立半导体模块 Motion SPM 5 SuperFET Series RoHS:否 制造商:Fairchild Semiconductor 产品: 类型: 安装风格: 封装 / 箱体: 封装:Tube |
| FSB50660SFT | 制造商:Fairchild Semiconductor Corporation 功能描述:600V, 1A, 3 PHASE, SUPERFET SMART POWER MODULE - Rail/Tube 制造商:Fairchild Semiconductor Corporation 功能描述:MOD SPM 600V 3.1A SPM5N-023 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / 600V, 1A, 3 PHASE, SuperFET SMART POWER MODULE |
| FSB50760SF | 功能描述:分立半导体模块 Motion SPM 5 SuperFET Series RoHS:否 制造商:Fairchild Semiconductor 产品: 类型: 安装风格: 封装 / 箱体: 封装:Tube |
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