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参数资料
| 型号： | FSB50550U |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | IC SMART POWER MOD 2A SPM22-AD |
| 标准包装： | 15 |
| 系列： | SPM® |
| 类型： | FET |
| 配置： | 3 相 |
| 电流： | 2A |
| 电压： | 500V |
| 电压 - 隔离： | 1500Vrms |
| 封装/外壳： | SPM22AD |
| 产品目录页面： | 1222 (CN2011-ZH PDF) |
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Pin Name
COM
V B(U)
V CC(U)
IN (UH)
IN (UL)
V S(U)
V B(V)
V CC(V)
IN (VH)
IN (VL)
V S(V)
V B(W)
V CC(W)
IN (WH)
IN (WL)
V S(W)
P
U
N U
N V
V
N W
W
Pin Description
IC Common Supply Ground
Bias Voltage for U Phase High Side FRFET Driving
Bias Voltage for U Phase IC and Low Side FRFET Driving
Signal Input for U Phase High-side
Signal Input for U Phase Low-side
Bias Voltage Ground for U Phase High Side FRFET Driving
Bias Voltage for V Phase High Side FRFET Driving
Bias Voltage for V Phase IC and Low Side FRFET Driving
Signal Input for V Phase High-side
Signal Input for V Phase Low-side
Bias Voltage Ground for V Phase High Side FRFET Driving
Bias Voltage for W Phase High Side FRFET Driving
Bias Voltage for W Phase IC and Low Side FRFET Driving
Signal Input for W Phase High-side
Signal Input for W Phase Low-side
Bias Voltage Ground for W Phase High Side FRFET Driving
Positive DC–Link Input
Output for U Phase
Negative DC–Link Input for U Phase
Negative DC–Link Input for V Phase
Output for V Phase
Negative DC–Link Input for W Phase
Output for W Phase
(1) COM
(2) V B(U)
(17) P
(3) V CC(U)
(4) IN (UH)
VCC
HIN
VB
HO
(5) IN (UL)
LIN
VS
(18) U
(6) V S(U)
(7) V B(V)
COM
LO
(19) N U
(8) V CC(V)
(9) IN (VH)
(10) IN (VL)
VCC
HIN
LIN
COM
VB
HO
VS
LO
(20) N V
(21) V
(11) V S(V)
(12) V B(W)
(13) V CC(W)
(14) IN (WH)
(15) IN (WL)
VCC
HIN
LIN
COM
VB
HO
VS
LO
(22) N W
(23) W
(16) V S(W)
Note:
Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM ? . External connections should be made as indicated in Fig-
ure 2 and 5.
Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)
FSB50550U Rev. A
2
www.fairchildsemi.com
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相关代理商/技术参数 |
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|---|---|
| FSB50550US | 功能描述:IGBT 模块 500V, 1.2A RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50550UTD | 功能描述:IGBT 模块 Smart Power Module RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50660SF | 功能描述:分立半导体模块 Motion SPM 5 SuperFET Series RoHS:否 制造商:Fairchild Semiconductor 产品: 类型: 安装风格: 封装 / 箱体: 封装:Tube |
| FSB50660SFT | 制造商:Fairchild Semiconductor Corporation 功能描述:600V, 1A, 3 PHASE, SUPERFET SMART POWER MODULE - Rail/Tube 制造商:Fairchild Semiconductor Corporation 功能描述:MOD SPM 600V 3.1A SPM5N-023 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / 600V, 1A, 3 PHASE, SuperFET SMART POWER MODULE |
| FSB50760SF | 功能描述:分立半导体模块 Motion SPM 5 SuperFET Series RoHS:否 制造商:Fairchild Semiconductor 产品: 类型: 安装风格: 封装 / 箱体: 封装:Tube |
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