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参数资料
| 型号： | FSB50550T |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC SMART POWER MOD 3.5A SPM23-AC |
| 产品培训模块： | Smart Power |
| 产品变化通告： | Pkg Pin Hole Shape Change 02/June/2008 |
| 标准包装： | 15 |
| 系列： | SPM® |
| 类型： | FET |
| 配置： | 3 相 |
| 电流： | 1.8A |
| 电压： | 500V |
| 电压 - 隔离： | 1500Vrms |
| 封装/外壳： | SPM23AC |
| 产品目录页面： | 1222 (CN2011-ZH PDF) |
January 2014
FSB50550T
Motion SPM ? 5 Series
Features
? UL Certified No. E209204 (UL1557)
? 500 V R DS(on) = 1.7 ?? Max ? FRFET MOSFET 3-Phase
Inverter with Gate Drivers
? Separate Open-Source Pins from Low-Side MOSFETs
for Three-Phase Current-Sensing
? Active-HIGH Interface, Works with 3.3 / 5 V Logic,
Schmitt-trigger Input
? Optimized for Low Electromagnetic Interference
? HVIC for Gate Driving and Under-Voltage Protection
? Isolation Rating: 1500 V rms / min.
? RoHS Compliant
Applications
? 3-Phase Inverter Driver for Small Power AC Motor
Drives
Package Marking & Ordering Information
Related Source
? AN-9082 - Motion SPM5 Series Thermal Performance
by Contact Pressure
? AN-9080 - User ’s Guide for Motion SPM 5 Series
Ver.1
General Description
The FSB50550T is an advanced Motion SPM ? 5 module
providing a fully-featured, high-performance inverter
output stage for AC Induction, BLDC and PMSM motors.
These modules integrate optimized gate drive of
the built-in MOSFETs (FRFET ? technology) to minimize
EMI and losses. The built-in, high-speed HVIC requires
only a single supply voltage and translates the incoming
logic-level gate inputs to the high-voltage, high-current
drive signals required to properly drive the module's
internal MOSFETs. Separate open-source MOSFET
terminals are available for each phase to support the
widest variety of control algorithms.
Device
FSB50550T
Device Marking
FSB50550T
Package
SPM5F-023
Packing Type
Rail
Quantity
15
?2007 Fairchild Semiconductor Corporation
FSB50550T Rev. C4
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FSB50550T_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Smart Power Module (SPM㈢) |
| FSB50550TB | 功能描述:IGBT 模块 500V, 1.2A, SPM5 RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50550TB2 | 功能描述:IGBT 模块 1.2A 500V SPM5 RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50550U | 功能描述:IGBT 模块 500V/1.2A Motion-SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50550US | 功能描述:IGBT 模块 500V, 1.2A RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
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