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| 型号： | FSB50550T |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/9页 |
| 文件大小： | 0K |
| 描述： | IC SMART POWER MOD 3.5A SPM23-AC |
| 产品培训模块： | Smart Power |
| 产品变化通告： | Pkg Pin Hole Shape Change 02/June/2008 |
| 标准包装： | 15 |
| 系列： | SPM® |
| 类型： | FET |
| 配置： | 3 相 |
| 电流： | 1.8A |
| 电压： | 500V |
| 电压 - 隔离： | 1500Vrms |
| 封装/外壳： | SPM23AC |
| 产品目录页面： | 1222 (CN2011-ZH PDF) |
Electrical Characteristics (T J = 25°C, V CC = V BS = 15 V unless otherwise specified.)
Inverter Part (each MOSFET unless otherwise specified.)
Symbol
Parameter
Conditions
Min Typ Max
Unit
BV DSS
I DSS
R DS(on)
V SD
t ON
t OFF
t rr
E ON
E OFF
Drain - Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Static Drain - Source
Turn-On Resistance
Drain - Source Diode
Forward Voltage
Switching Times
V IN = 0 V, I D = 250 ? A (2nd Note 1)
V IN = 0 V, V DS = 500V
V CC = V BS = 15 V, V IN = 5 V, I D = 1.2 A
V CC = V BS = 15V, V IN = 0 V, I D = -1.2 A
V PN = 300 V, V CC = V BS = 15 V, I D = 1.2 A
V IN = 0 V ? 5 V, Inductive Load L = 3 mH
High- and Low-Side MOSFET Switching
(2nd Note 2)
500
-
-
-
-
-
-
-
-
-
-
1.3
-
560
440
130
71
11
-
250
1.7
1.2
-
-
-
-
-
V
? A
?
V
ns
ns
ns
? J
? J
RBSOA
Reverse Bias Safe Oper-
ating Area
V PN = 400 V, V CC = V BS = 15 V, I D = I DP , V DS = BV DSS ,
T J = 150°C
High- and Low-Side MOSFET Switching (2nd Note 3)
Full Square
Control Part (each HVIC unless otherwise specified.)
Symbol
Parameter
Conditions
Min Typ Max
Unit
I QCC
I QBS
Quiescent V CC Current
Quiescent V BS Current
V CC = 15 V,
V IN = 0 V
V BS = 15 V,
V IN = 0 V
Applied Between V CC and COM
Applied Between V B(U) - U,
V B(V) - V, V B(W) - W
-
-
-
-
160
100
? A
? A
UV CCD
UV CCR
UV BSD
UV BSR
Low-Side Under-Voltage
Protection (Figure 8)
High-Side Under-Voltage
Protection (Figure 9)
V CC Under-Voltage Protection Detection Level
V CC Under-Voltage Protection Reset Level
V BS Under-Voltage Protection Detection Level
V BS Under-Voltage Protection Reset Level
7.4
8.0
7.4
8.0
8.0
8.9
8.0
8.9
9.4
9.8
9.4
9.8
V
V
V
V
V IH
V IL
I IH
I IL
ON Threshold Voltage
OFF Threshold Voltage
Input Bias Current
Logic HIGH Level
Logic LOW Level
V IN = 5 V
V IN = 0 V
Applied between IN and COM
Applied between IN and COM
2.9
-
-
-
-
-
10
-
-
0.8
20
2
V
V
? A
? A
2nd Notes:
1. BV DSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM ? 5 product. V PN should be sufficiently less than this
value considering the effect of the stray inductance so that V PN should not exceed BV DSS in any case.
2. t ON and t OFF include the propagation delay of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field
applications due to the effect of different printed circuit boards and wirings. Please see Figure 4 for the switching time definition with the switching test circuit of Figure 5.
3. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 5 for the RBSOA test
circuit that is same as the switching test circuit.
?2007 Fairchild Semiconductor Corporation
FSB50550T Rev. C4
4
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FSB50550T_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Smart Power Module (SPM㈢) |
| FSB50550TB | 功能描述:IGBT 模块 500V, 1.2A, SPM5 RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50550TB2 | 功能描述:IGBT 模块 1.2A 500V SPM5 RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50550U | 功能描述:IGBT 模块 500V/1.2A Motion-SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50550US | 功能描述:IGBT 模块 500V, 1.2A RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
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