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| 型号： | FSB50550T |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/9页 |
| 文件大小： | 0K |
| 描述： | IC SMART POWER MOD 3.5A SPM23-AC |
| 产品培训模块： | Smart Power |
| 产品变化通告： | Pkg Pin Hole Shape Change 02/June/2008 |
| 标准包装： | 15 |
| 系列： | SPM® |
| 类型： | FET |
| 配置： | 3 相 |
| 电流： | 1.8A |
| 电压： | 500V |
| 电压 - 隔离： | 1500Vrms |
| 封装/外壳： | SPM23AC |
| 产品目录页面： | 1222 (CN2011-ZH PDF) |
C 1
(1) COM
R 1
(2) V B(U)
(17) P
R 5
C 5
C 2
(3) V CC(U)
(4) IN (UH)
(5) IN (UL)
(6) NC
VCC
HIN
LIN
COM
VB
HO
VS
LO
(18) U, V S(U)
C 3
V DC
R 1
(7) V B(V)
(19) N U
C 2
(8) V CC(V)
(9) IN (VH)
(10) IN (VL)
(11) NC
VCC
HIN
LIN
COM
VB
HO
VS
LO
(20) N V
(21) V, V S(V)
M
R 1
(12) V B(W)
(13) V CC(W)
(14) IN (WH)
(15) IN (WL)
VCC
HIN
LIN
VB
HO
VS
(22) N W
(23) W, V S(W)
C 2
(16) NC
COM
LO
For 3-phase current sensing and protection
R 4
15-V
Supply
C 4
R 3
Figure 8. Example of Application Circuit
4th Notes:
1. About pin position, refer to Figure 1.
2. RC-coupling (R 5 and C 5 , R 4 and C 6 ) and C 4 at each input of Motion SPM ? 5 product and MCU are useful to prevent improper input signal caused by surge-noise.
3. The voltage-drop across R 3 affects the low-side switching performance and the bootstrap characteristics since it is placed between COM and the source terminal of the low-
side MOSFET. For this reason, the voltage-drop across R 3 should be less than 1 V in the steady-state.
4. Ground-wires and output terminals, should be thick and short in order to avoid surge-voltage and malfunction of HVIC.
5. All the filter capacitors should be connected close to Motion SPM 5 product, and they should have good characteristics for rejecting high-frequency ripple current.
?2007 Fairchild Semiconductor Corporation
FSB50550T Rev. C4
7
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FSB50550T_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Smart Power Module (SPM㈢) |
| FSB50550TB | 功能描述:IGBT 模块 500V, 1.2A, SPM5 RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50550TB2 | 功能描述:IGBT 模块 1.2A 500V SPM5 RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50550U | 功能描述:IGBT 模块 500V/1.2A Motion-SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSB50550US | 功能描述:IGBT 模块 500V, 1.2A RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
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