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| 型号： | FSB50550UTD |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 描述： | MOD SPM 500V 2A SPM23-ED |
| 标准包装： | 15 |
| 系列： | SPM™ |
| 类型： | FET |
| 配置： | 3 相桥 |
| 电流： | 2A |
| 电压： | 500V |
| 电压 - 隔离： | 1500Vrms |
| 封装/外壳： | SPM23ED |
Electrical Characteristics (T J = 25°C, V CC = V BS = 15 V unless otherwise specified.)
Inverter Part (each MOSFET unless otherwise specified.)
Symbol
Parameter
Conditions
Min Typ Max
Unit
BV DSS
? BV DSS /
? T J
I DSS
R DS(on)
V SD
t ON
t OFF
t rr
E ON
E OFF
Drain - Source
Breakdown Voltage
Breakdown Voltage Tem-
perature Coefficient
Zero Gate Voltage
Drain Current
Static Drain - Source
Turn-On Resistance
Drain - Source Diode
Forward Voltage
Switching Times
V IN = 0 V, I D = 250 ? A (2nd Note 1)
I D = 250 ? A, Referenced to 25°C
V IN = 0 V, V DS = 500 V
V CC = V BS = 15 V, V IN = 5 V, I D = 0.5 A
V CC = V BS = 15V, V IN = 0 V, I D = -0.5 A
V PN = 300 V, V CC = V BS = 15 V, I D = 0.5 A
V IN = 0 V ? 5 V, Inductive Load L = 3 mH
High- and Low-Side MOSFET Switching
(2nd Note 2)
500
-
-
-
-
-
-
-
-
-
-
0.53
-
1.0
-
600
500
100
60
10
-
-
250
1.4
1.2
-
-
-
-
-
V
V
? A
?
V
ns
ns
ns
? J
? J
RBSOA
Reverse Bias Safe Oper-
ating Area
V PN = 400 V, V CC = V BS = 15 V, I D = I DP , V DS = BV DSS ,
T J = 150°C
High- and Low-Side MOSFET Switching (2nd Note 3)
Full Square
Control Part (each HVIC unless otherwise specified.)
Symbol
Parameter
Conditions
Min Typ Max
Unit
I QCC
I QBS
Quiescent V CC Current
Quiescent V BS Current
V CC = 15 V,
V IN = 0 V
V BS = 15 V,
V IN = 0 V
Applied Between V CC and COM
Applied Between V B(U) - U,
V B(V) - V, V B(W) - W
-
-
-
-
160
100
? A
? A
UV CCD
UV CCR
UV BSD
UV BSR
Low-Side Under-Voltage
Protection (Figure 8)
High-Side Under-Voltage
Protection (Figure 9)
V CC Under-Voltage Protection Detection Level
V CC Under-Voltage Protection Reset Level
V BS Under-Voltage Protection Detection Level
V BS Under-Voltage Protection Reset Level
7.4
8.0
7.4
8.0
8.0
8.9
8.0
8.9
9.4
9.8
9.4
9.8
V
V
V
V
V IH
V IL
I IH
I IL
ON Threshold Voltage
OFF Threshold Voltage
Input Bias Current
Logic High Level
Logic Low Level
V IN = 5V
V IN = 0V
Applied between IN and COM
Applied between IN and COM
2.9
-
-
-
-
-
10
-
-
0.8
20
2
V
V
? A
? A
Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)
Symbol
Parameter
Conditions
Min Typ Max
Unit
V FB
t rrB
Forward Voltage
Reverse Recovery Time
I F = 0.1 A, T C = 25°C (2nd Note 5)
I F = 0.1 A, T C = 25°C
-
-
2.0
80
-
-
V
ns
2nd Notes:
1. BV DSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM ? 5 product. V PN should be sufficiently less than this
value considering the effect of the stray inductance so that V PN should not exceed BV DSS in any case.
2. t ON and t OFF include the propagation delay of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field
applications due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7.
3. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 7 for the RBSOA test
circuit that is same as the switching test circuit.
4. Built-in bootstrap diode includes around 15 ? resistance characteristic. Please refer to Figure 2.
?2010 Fairchild Semiconductor Corporation
FSB50550UTD Rev. C4
4
www.fairchildsemi.com
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