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参数资料
| 型号： | GE28F008B3BA70 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | 1M X 8 FLASH 2.7V PROM, 70 ns, PBGA46 |
| 封装： | VFBGA-46 |
| 文件页数： | 1/70页 |
| 文件大小： | 1215K |
| 代理商： | GE28F008B3BA70 |
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Intel Advanced Boot Block Flash
Memory (B3)
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Datasheet
Product Features
The Intel
Advanced Boot Block Flash Memory (B3) device, manufactured on the Intel 0.13
m
and 0.18
m technologies, represents a feature-rich solution at overall lower system cost. The
B3 device in x16 will be available in 48-lead TSOP and 48-ball CSP packages. The x8 option of
this product family is available only in 40-lead TSOP and 48-ball BGA* packages. Additional
information about this product family can be obtained by accessing Intel’s website at: http://
www.intel.com/design/flash.
Flexible SmartVoltage Technology
— 2.7 V – 3.6 V read/program/erase
— 12 V VPP fast production programming
1.65 V – .5 V or 2.7 V – 3.6 V I/O option
— Reduces overall system power
High Performance
— 2.7 V – 3.6 V: 70 ns max access time
Optimized Block Sizes
— Eight 8-KB blocks for data, top or
bottom locations
— Up to 127 x 64-KB blocks for code
Block Locking
—VCC-level control through Write Protect
WP#
Low Power Consumption
— 9 mA typical read current
Absolute Hardware-Protection
—VPP = GND option
—VCC lockout voltage
Extended Temperature Operation
— –40 °C to +85 °C
Automated Program and Block Erase
— Status registers
Intel Flash Data Integrator Software
— Flash Memory Manager
— System Interrupt Manager
— Supports parameter storage, streaming
data (for example, voice)
Extended Cycling Capability
— Minimum 100,000 block erase cycles
guaranteed
Automatic Power Savings Feature
— Typical ICCS after bus inactivity
Standard Surface Mount Packaging
— 48-Ball CSP packages
— 40- and 48-Lead TSOP packages
Density and Footprint Upgradeable for
common package
— 8-, 16-, 32-, and 64-Mbit densities
ETOX VIII (0.13
m) Flash
Technology
— 16 and 32-Mbit densities
ETOX VII (0.18
m) Flash Technology
— 16-, 32-, and 64-Mbit densities
ETOX VI (0.25
m) Flash Technology
— 8-, 16-, and 32-Mbit densities
The x8 option is not recommended for
new designs
290580-019
September 2004
Notice: This specification is subject to change without notice. Verify with your local Intel sales
office that you have the latest datasheet before finalizing a design.
相关PDF资料 |
PDF描述 |
|---|---|
| GE28F128W18BC60 | 8M X 16 FLASH 1.8V PROM, 60 ns, PBGA56 |
| GF-61-APC/90-L | BOARD TERMINATED, FEMALE, RF CONNECTOR, SOLDER |
| GF-61-APC/90L | BOARD TERMINATED, FEMALE, RF CONNECTOR, SOLDER, SOCKET |
| GF-61-APC-S | BOARD TERMINATED, FEMALE, RF CONNECTOR, SOLDER |
| GF-61-APC/S | BOARD TERMINATED, FEMALE, RF CONNECTOR, SOLDER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GE28F008B3BA90 | 制造商:Intel 功能描述: |
| GE28F008B3TA90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| GE28F128J3A-110 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
| GE28F128J3A-115 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
| GE28F128J3A-120 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
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