参数资料
型号: GE28F008B3BA70
厂商: INTEL CORP
元件分类: PROM
英文描述: 1M X 8 FLASH 2.7V PROM, 70 ns, PBGA46
封装: VFBGA-46
文件页数: 46/70页
文件大小: 1215K
代理商: GE28F008B3BA70
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
50
Datasheet
9.2
Reset Specifications
9.3
Power Supply Decoupling
Flash memory power-switching characteristics require careful device decoupling. System
designers must consider the following three supply current issues:
1. Standby current levels (ICCS)
2. Read current levels (ICCR)
3. Transient peaks produced by falling and rising edges of CE#.
Table 24. Reset Specifications
Symbol
Parameter
VCC 2.7 V – 3.6 V
Unit
Notes
Min
Max
tPLPH
RP# Low to Reset during Read
(If RP# is tied to VCC, this specification is not
applicable)
100
ns
1, 2
tPLRH1
RP# Low to Reset during Block Erase
22
s
3
tPLRH2
RP# Low to Reset during Program
12
s
3
NOTES:
1. If tPLPH is < 100 ns the device can still reset but this is not guaranteed.
2. If RP# is asserted while a Block Erase or Word Program operation is not executing, the reset
will complete within 100 ns.
3. Sampled, but not 100% tested.
Figure 14. Deep Power-Down/Reset Operations Waveforms
IH
V
IL
V
R P # (P )
PL P H
t
IH
V
IL
V
R P # (P )
PL P H
t
(A ) R e s e t during R e a d M ode
A bort
Co m p le te
PH Q V
t
PH W L
t
PH EL
t
PH Q V
t
PH W L
t
PH EL
t
(B ) R e s e t d u rin g P ro g ra m o r B lo c k E ra s e ,
<
PL P H
t
PL R H
t
PL R H
t
IH
V
IL
V
R P # (P )
PL P H
t
A bort
Co m p le te
PH Q V
t
PH W L
t
PH EL
t
PL R H
t
D eep
Po w e r-
Do wn
(C ) R e s e t P ro g ra m o r B lo c k E ra s e ,
>
PLPH
t
PL R H
t
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