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参数资料
| 型号： | GP4435 |
| 厂商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P沟道增强型功率MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 300K |
| 代理商： | GP4435 |
GP4435
Page: 1/4
ISSUED DATE :2005/03/02
REVISED DATE :
G
G P
P 44443355
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GP4435 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
-
0.5334
c1
0.203
0.279
A1
0.381
-
D
9.017
10.16
A2
2.921
4.953
E
6.096
7.112
b
0.356
0.559
E1
7.620
8.255
b1
0.356
0.508
e
2.540 BSC
b2
1.143
1.778
HE
-
10.92
b3
0.762
1.143
L
2.921
3.810
c
0.203
0.356
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
f 20
V
Continuous Drain Current
ID @TA=25 :
-9
A
Continuous Drain Current
ID @TA=70 :
-5.8
A
Pulsed Drain Current1
IDM
-50
A
Total Power Dissipation
PD @TA=25 :
2.5
W
Linear Derating Factor
0.02
W/
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3
Max.
Rthj-amb
50
/W
BVDSS
-30V
RDS(ON)
20m
ID
-9A
Pb Free Plating Product
L
A
SEATING PLANE
e
b
Z
E
D
c
SECTION Z - Z
b
GAUGE PLANE
DIP-8
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