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参数资料
| 型号： | GP4435 |
| 厂商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P沟道增强型功率MOSFET |
| 文件页数： | 2/4页 |
| 文件大小： | 300K |
| 代理商： | GP4435 |
GP4435
Page: 2/4
ISSUED DATE :2005/03/02
REVISED DATE :
Electrical Characteristics(Tj = 25
Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-30
-
V
VGS=0, ID=-250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
-0.03
-
V/ :
Reference to 25 : , ID=-1mA
Gate Threshold Voltage
VGS(th)
-1.0
-
-3.0
V
VDS=VGS, ID=-250uA
Forward Transconductance
gfs
-
8.2
-
S
VDS=-10V, ID=-9A
Gate-Source Leakage Current
IGSS
-
D100
nA
VGS= D20V
Drain-Source Leakage Current(Tj=25 : )
-
-1
uA
VDS=-30V, VGS=0
Drain-Source Leakage Current(Tj=70 : )
IDSS
-
-25
uA
VDS=-24V, VGS=0
-
20
VGS=-10V, ID=-9A
Static Drain-Source On-Resistance2
RDS(ON)
-
35
m
VGS=-4.5V, ID=-5A
Total Gate Charge2
Qg
-
26
42
Gate-Source Charge
Qgs
-
6
-
Gate-Drain (“Miller”) Change
Qgd
-
16
-
nC
ID=-9A
VDS=-24V
VGS=-4.5V
Turn-on Delay Time2
Td(on)
-
14
-
Rise Time
Tr
-
13
-
Turn-off Delay Time
Td(off)
-
70
-
Fall Time
Tf
-
48
-
ns
VDS=-15V
ID=-1A
VGS=-10V
RG=3.3
RD=15
Input Capacitance
Ciss
-
1330
2100
Output Capacitance
Coss
-
580
-
Reverse Transfer Capacitance
Crss
-
160
-
pF
VGS=0V
VDS=-25V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
-1.2
V
IS=-9A, VGS=0V
Reverse Recovery Time
Trr
-
44
-
ns
Reverse Recovery Charge
Qrr
-
70
-
nC
IS=-9A, VGS=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Mounted on Min. copper pad, t 10sec.
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