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参数资料
| 型号： | GS8342D37BD-300I |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | SRAM |
| 英文描述： | 1M X 36 QDR SRAM, 0.45 ns, PBGA165 |
| 封装： | 13 X 15 MM, 1 MM PITCH, FPBGA-165 |
| 文件页数： | 4/30页 |
| 文件大小： | 962K |
| 代理商： | GS8342D37BD-300I |
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Preliminary
GS8342D07/10/19/37BD-450/400/350/333/300
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 4/2011
12/30
2011, GSI Technology
State Diagram
Power-Up
Read NOP
Load New
Read Address
D Count = 0
DDR Read
D Count = D Count + 1
Write NOP
Load New
Write Address
D Count = 0
DDR Write
D Count = D Count + 1
WRITE
READ
D Count = 2
WRITE
D Count = 2
READ
WRITE
Always
READ
D Count = 2
Notes:
1. Internal burst counter is fixed as 2-bit linear (i.e., when first address is A0+0, next internal burst address is A0+1.
2. “READ” refers to read active status with R = Low, “READ” refers to read inactive status with R = High. The same is
true for “WRITE” and “WRITE”.
3. Read and write state machine can be active simultaneously.
4. State machine control timing sequence is controlled by K.
READ
D Count = 1
Always
Increment
Read Address
WRITE
D Count = 2
Increment
Write Address
WRITE
D Count = 1
Always
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相关代理商/技术参数 |
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| GS8342D38BD-350 | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
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| GS8342D38BD-500 | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
| GS8342D38BD-550 | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
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