参数资料
型号: GS8342D37BD-300I
厂商: GSI TECHNOLOGY
元件分类: SRAM
英文描述: 1M X 36 QDR SRAM, 0.45 ns, PBGA165
封装: 13 X 15 MM, 1 MM PITCH, FPBGA-165
文件页数: 7/30页
文件大小: 962K
代理商: GS8342D37BD-300I
Capacitance
oC, f = 1 MHZ, VDD = 1.8 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
4
5
pF
Output Capacitance
COUT
VOUT = 0 V
6
7
pF
Clock Capacitance
CCLK
VIN = 0 V
5
6
pF
Note:
This parameter is sample tested.
AC Test Conditions
Parameter
Conditions
Input high level
1.25
Input low level
0.25 V
Max. input slew rate
2 V/ns
Input reference level
0.75
Output reference level
VDDQ/2
Note:
Test conditions as specified with output loading as shown unless otherwise noted.
Preliminary
GS8342D07/10/19/37BD-450/400/350/333/300
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 4/2011
15/30
2011, GSI Technology
DQ
VT == 0.75 V
50
Ω
RQ = 250
Ω (HSTL I/O)
VREF = 0.75 V
AC Test Load Diagram
Input and Output Leakage Characteristics
Parameter
Symbol
Test Conditions
Min.
Max
Input Leakage Current
(except mode pins)
IIL
VIN = 0 to VDD
–2 uA
2 uA
Doff
IILDOFF
VIN = 0 to VDD
–20 uA
2 uA
ODT
IIL ODT
VIN = 0 to VDD
–2 uA
20 uA
Output Leakage Current
IOL
Output Disable,
VOUT = 0 to VDDQ
–2 uA
2 uA
(TA = 25
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