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参数资料
| 型号： | HAT1126R |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道功率MOS FET的高速电源开关 |
| 文件页数： | 4/8页 |
| 文件大小： | 121K |
| 代理商： | HAT1126R |
HAT1126R, HAT1126RJ
Rev.1.00 Sep. 10, 2004, page 4 of 7
Static Drain to Source on State Resistance
vs. Temperature
160
–0.01 –0.03 –0.1 –0.3
–1
–3
–10
100
3
0.3
1
30
10
0.03
0.1
0.01
Forward Transfer Admittance vs.
Drain Current
25
°
C
Tc = –25
°
C
V
DS
= –10 V
Pulse Test
S
D
(
)
F
|
Case Temperature Tc (
°
C)
Drain Current I
D
(A)
120
80
40
–50
0
–25
75
50
25
100
125
150
0
V
GS
= –4.5 V
–10 V
–1 A
–3 A
–5 A
I
D
= –1, –3, –5 A
Pulse Test
75
°
C
–0.1
–0.3
–1
–3
–10
Body-Drain Diode Reverse
Recovery Time
0
–10
–20
–30
–40
–50
3000
10000
1000
100
300
Typical Capacitance vs.
Drain to Source Voltage
0
–20
–40
–60
–80
–100
0
0
–4
–8
–12
–16
16
32
48
64
160
–20
Dynamic Input Characteristics
100
50
5
10
2
1
20
1000
300
30
100
3
10
1
–0.1
–0.3
Drain Current I
D
(A)
–1
–3
–10
Switching Characteristics
di / dt = 50 A /
μ
s
V
GS
= 0, Ta = 25
°
C
10
30
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
I
D
= –6 A
V
GS
V
DS
V
DD
= –50V
–25V
–10V
V
DD
= –50 V
–25 V
–10 V
V
GS
= –10 V, V
DD
= –30 V
PW = 5
μ
s, R
G
= 4.7
, duty
≤
1 %
tr
td(on)
td(off)
Reverse Drain Current I
DR
(A)
R
C
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nc)
D
D
G
G
S
tf
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相关代理商/技术参数 |
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|---|---|
| HAT1126R-EL-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 6A 8-Pin SOP T/R Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 6A 8-Pin SOP T/R |
| HAT1126RJ | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1126RJ-EL-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 6A 8-Pin SOP T/R 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 6A 8-Pin SOP T/R |
| HAT1127H | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel Power MOS FET Power Switching |
| HAT1127HELE | 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 40A 5-Pin(4+Tab) LFPAK T/R |
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