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参数资料
| 型号： | HCPL3180 |
| 英文描述： | Current, High Speed IGBT/MOSFET Gate Drive Optocoupler |
| 中文描述： | 当前，高速式IGBT / MOSFET的门极驱动光电耦合器 |
| 文件页数： | 17/19页 |
| 文件大小： | 466K |
| 代理商： | HCPL3180 |
17
CMR with the LED On (CMR
H
)
A high CMR LED drive circuit
must keep the LED on during
common mode transients. This
is achieved by over-driving the
LED current beyond the input
threshold so that it is not pulled
below the threshold during a
transient. A minimum LED
current of 10 mA provides
adequate margin over the
maximum I
FLH
of 8 mA to
achieve 10 kV/us CMR.
CMR with the LED Off (CMR
L
)
A high CMR LED drive circuit
must keep the LED off (V
F
≤
V
F(OFF)
) during common mode
transients. For example, during
a -dV
CM
/dt transient in Figure
31, the current flowing through
C
LEDP
also flows through the
R
SAT
and V
SAT
of the logic gate.
As long as the low state voltage
developed across the logic gate
is less than V
F(OFF)
the LED will
remain off and no common
mode failure will occur.
The open collector drive circuit,
shown in Figure 32, cannot keep
the LED off during a +dV
CM
/dt
transient, since all the current
flowing through C
LEDN
must be
supplied by the LED, and it is
not recommended for
applications requiring ultra high
CMR
L
performance. Figure 33 is
an alternative drive circuit,
which like the recommended
application circuit (Figure 25),
does achieve ultra high CMR
performance by shunting the
LED in the off state.
Under Voltage Lockout Feature
The HCPL-3180 contains an
under voltage lockout (UVLO)
feature that is designed to
protect the IGBT under fault
conditions which cause the
HCPL-3180 supply voltage
(equivalent to the fully charged
IGBT gate voltage) to drop below
a level necessary to keep the
IGBT in a low resistance state.
When the HCPL-3180 output is
in the high state and the supply
voltage drops below the HCPL-
3180 U
VLO-
threshold (typ 7.5 V)
the optocoupler output will go
into the low state. When the
HCPL-3180 output is in the low
state and the supply voltage
rises above the HCPL-3180
V
UVLO+
threshold (typ 8.5 V) the
optocoupler output will go into
the high state (assume LED is
“ON”).
Figure 34. Under Voltage Lock Out
Figure 35. Minimum LED Skew for Zero Dead
Time
IPM Dead Time and Propagation
Delay Specifications
The HCPL-3180 includes a
Propagation Delay Difference
(PDD) specification intended to
help designers minimize “dead
time” in their power invertor
designs. Dead time is the time
during which the high and low
side power transistors are off.
Any overlap in Q1 and Q2
conduction will result in large
currents flowing through the
power devices from the high
voltage to the low-voltage motor
rails.
0
2
4
6
8
10
12
14
16
18
20
0
5
10
15
20
(V
CC
-V
EE
) - SUPPLY VOLTAGE - V
V
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| HCPL-5121-100 | 2.0 Amp Output Current IGBT Gate Drive Optocoupler |
| HCPL-5121-200 | 2.0 Amp Output Current IGBT Gate Drive Optocoupler |
| HCPL-5121-300 | 2.0 Amp Output Current IGBT Gate Drive Optocoupler |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HCPL-3180 | 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
| HCPL-3180-000E | 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
| HCPL-3180-000E | 制造商:Avago Technologies 功能描述:GATE DRIVE OPTOCOUPLER LF - LEAD FREE |
| HCPL-3180-060 | 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
| HCPL-3180-060E | 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
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