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参数资料
| 型号： | HGTG10N120BND |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 8/8页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CH NPT 1200V 35A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 产品目录绘图： | IGBT TO-247 Package |
| 标准包装： | 150 |
| IGBT 类型： | NPT |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，10A |
| 电流 - 集电极 (Ic)（最大）： | 35A |
| 功率 - 最大： | 298W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx?
Bottomless?
CoolFET?
CROSSVOLT ?
DenseTrench?
DOME?
EcoSPARK?
E 2 CMOS TM
EnSigna TM
FACT?
FACT Quiet Series?
FAST ?
FASTr?
FRFET?
GlobalOptoisolator?
GTO?
HiSeC?
ISOPLANAR?
LittleFET?
MicroFET?
MicroPak?
MICROWIRE?
OPTOLOGIC?
OPTOPLANAR?
PACMAN?
POP?
Power247?
PowerTrench ?
QFET?
QS?
QT Optoelectronics?
Quiet Series?
SILENT SWITCHER ?
SMART START?
STAR*POWER?
Stealth?
SuperSOT?-3
SuperSOT?-6
SuperSOT?-8
SyncFET?
TinyLogic?
TruTranslation?
UHC?
UltraFET ?
VCX?
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status
Formative or
In Design
First Production
Full Production
Not In Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
相关PDF资料 |
PDF描述 |
|---|---|
| HGTG11N120CND | IGBT NPT N-CH 1200V 43A TO-247 |
| HGTG12N60A4D | IGBT N-CH SMPS 600V 54A TO247 |
| HGTG12N60C3D | IGBT UFS N-CHAN 600V 24A TO-247 |
| HGTG18N120BND | IGBT NPT N-CHAN 1200V 54A TO-247 |
| HGTG20N60A4D | IGBT N-CH SMPS 600V 70A TO247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG10N120BND | 制造商:Fairchild Semiconductor Corporation 功能描述:SINGLE IGBT 1.2KV 35A |
| HGTG10N120BND_Q | 功能描述:IGBT 晶体管 35A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG10N120ND | 制造商:Rochester Electronics LLC 功能描述: |
| HGTG11N120CN | 功能描述:IGBT 晶体管 43A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG11N120CND | 功能描述:IGBT 晶体管 43A 1200V NCh w/Anti Parallel Hyprfst Dde RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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