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参数资料
| 型号： | HGTG20N60A4D |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CH SMPS 600V 70A TO247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 产品目录绘图： | IGBT TO-247 Package |
| 标准包装： | 300 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，20A |
| 电流 - 集电极 (Ic)（最大）： | 70A |
| 功率 - 最大： | 290W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
| 其它名称： | HGTG20N60A4D-ND HGTG20N60A4DFS HGTG20N60A4D_NL HGTG20N60A4D_NL-ND |
HGTG20N60A4D
Data Sheet
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG20N60A4D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25 o C and 150 o C. The IGBT used is the
development type TA49339. The diode used in anti-parallel
is the development type TA49372.
February 2009
Features
? >100kHz Operation At 390V, 20A
? 200kHz Operation At 390V, 12A
? 600V Switching SOA Capability
? Typical Fall Time . . . . . . . . . . . . . . . . 55ns at T J = 125 o C
? Low Conduction Loss
? Temperature Compensating SABER? Model
www.fairchildsemi.com
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies .
Formerly Developmental Type TA49341.
Ordering Information
Packaging
JEDEC STYLE TO-247
PART NUMBER
PACKAGE
BRAND
HGTG20N60A4D
TO-247
20N60A4D
COLLECTOR
NOTE: When ordering, use the entire part number.
(FLANGE)
Symbol
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
?2009 Fairchild Semiconductor Corporation
HGTG20N60A4D Rev. C1
相关PDF资料 |
PDF描述 |
|---|---|
| HGTG20N60B3D | IGBT N-CH UFS 600V 20A TO-247 |
| HGTG20N60B3 | IGBT UFS N-CHAN 600V 40A TO-247 |
| HGTG27N120BN | IGBT NPT N-CH 1200V 72A TO-247 |
| HGTG30N60A4D | IGBT N-CH SMPS 600V 60A TO-247 |
| HGTG30N60A4 | IGBT N-CH SMPS 600V 75A TO247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG20N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG20N60A4D_09 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG20N60B3 | 功能描述:IGBT 晶体管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG20N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V40ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,40A,TO-247 |
| HGTG20N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
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