参数资料
型号: HGTG20N60A4D
厂商: Fairchild Semiconductor
文件页数: 6/9页
文件大小: 0K
描述: IGBT N-CH SMPS 600V 70A TO247
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Lead Frame Change 20/Dec/2007
产品目录绘图: IGBT TO-247 Package
标准包装: 300
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.7V @ 15V,20A
电流 - 集电极 (Ic)(最大): 70A
功率 - 最大: 290W
输入类型: 标准
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件
产品目录页面: 1610 (CN2011-ZH PDF)
其它名称: HGTG20N60A4D-ND
HGTG20N60A4DFS
HGTG20N60A4D_NL
HGTG20N60A4D_NL-ND
HGTG20N60A4D
Typical Performance Curves
Unless Otherwise Specified (Continued)
5
4
3
2
1
FREQUENCY = 1MHz
C IES
C OES
2.2
2.1
2.0
1.9
1.8
DUTY CYCLE < 0.5%, T J = 25 o C
PULSE DURATION = 250 μ s
I CE = 30A
I CE = 20A
I CE = 10A
C RES
0
0
20
40
60
80
100
1.7
8
9
10
11
12
13
14
15
16
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
V GE , GATE TO EMITTER VOLTAGE (V)
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
30
25
20
DUTY CYCLE < 0.5%,
PULSE DURATION = 250 μ s
125 o C
90
80
70
60
50
dI EC /dt = 200A/ μ s
125 o C tb
125 o C trr
125 o C ta
15
25 o C
40
10
5
30
20
25 o C trr
25 o C ta
0
0
0.5
1.0
1.5
2.0
2.5
3.0
10
0
0
4
8
12
16
25 o C tb
20
V EC , FORWARD VOLTAGE (V)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
I EC , FORWARD CURRENT (A)
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
50
40
125 o C ta
I EC = 20A, V CE = 390V
800
600
V CE = 390V
125 o C, I EC = 20A
30
125 o C tb
400
125 o C, I EC = 10A
20
10
25 o C ta
25 o C tb
200
25 o C, I EC = 20A
25 o C, I EC = 10A
0
200
300
400
500
600
700
800
900
1000
0
200
300
400
500
600
700
800
900
1000
di EC /dt, RATE OF CHANGE OF CURRENT (A/ μ s)
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
?2009 Fairchild Semiconductor Corporation
di EC /dt, RATE OF CHANGE OF CURRENT (A/ μ s)
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
HGTG20N60A4D Rev. C1
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