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参数资料
| 型号： | HGTG20N60A4D |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CH SMPS 600V 70A TO247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 产品目录绘图： | IGBT TO-247 Package |
| 标准包装： | 300 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，20A |
| 电流 - 集电极 (Ic)（最大）： | 70A |
| 功率 - 最大： | 290W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
| 其它名称： | HGTG20N60A4D-ND HGTG20N60A4DFS HGTG20N60A4D_NL HGTG20N60A4D_NL-ND |
HGTG20N60A4D
Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified
HGTG20N60A4D
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV CES
Collector Current Continuous
At T C = 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C25
At T C = 110 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I CM
Diode Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I FM110
Diode Maximum Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I FM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GEM
Switching Safe Operating Area at T J = 150 o C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T C = 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
Power Dissipation Derating T C > 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L
600
70
40
280
20
80
± 20
± 30
100A at 600V
290
2.32
-55 to 150
260
V
A
A
A
A
A
V
V
W
W/ o C
o C
o C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE 1: Pulse width limited by maximum junction temperature.
Electrical Specifications
T J = 25 o C, Unless Otherwise Specified
PARAMETER
Collector to Emitter Breakdown Voltage
SYMBOL
BV CES
TEST CONDITIONS
I C = 250 μ A, V GE = 0V
MIN
600
TYP
-
MAX
-
UNITS
V
Collector to Emitter Leakage Current
I CES
V CE = 600V
T J = 25 o C
-
-
250
μ A
T J = 125 o C
-
-
3.0
mA
Collector to Emitter Saturation Voltage
V CE(SAT)
I C = 20A,
V GE = 15V
T J = 25 o C
T J = 125 o C
-
-
1.8
1.6
2.7
2.0
V
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
V GE(TH)
I GES
SSOA
V GEP
I C = 250 μ A, V CE = 600V
V GE = ± 20V
T J = 150 o C, R G = 3 Ω , V GE = 15V,
L = 100 μ H, V CE = 600V
I C = 20A, V CE = 300V
4.5
-
100
-
5.5
-
-
8.6
7.0
± 250
-
-
V
nA
A
V
On-State Gate Charge
Q g(ON)
I C = 20A,
V CE = 300V
V GE = 15V
V GE = 20V
-
-
142
182
162
210
nC
nC
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
t d(ON)I
t rI
t d(OFF)I
t fI
E ON1
E ON2
E OFF
t d(ON)I
t rI
t d(OFF)I
t fI
E ON1
E ON2
E OFF
IGBT and Diode at T J = 25 o C,
I CE = 20A,
V CE = 390V,
V GE = 15V,
R G = 3 Ω,
L = 500 μ H,
Test Circuit Figure 24
IGBT and Diode at T J = 125 o C,
I CE = 20A,
V CE = 390V, V GE = 15V,
R G = 3 Ω,
L = 500 μ H,
Test Circuit Figure 24
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15
12
73
32
105
280
150
15
13
105
55
115
510
330
-
-
-
-
-
350
200
21
18
135
73
-
600
500
ns
ns
ns
ns
μ J
μ J
μ J
ns
ns
ns
ns
μ J
μ J
μ J
?2009 Fairchild Semiconductor Corporation
HGTG20N60A4D Rev. C1
相关PDF资料 |
PDF描述 |
|---|---|
| HGTG20N60B3D | IGBT N-CH UFS 600V 20A TO-247 |
| HGTG20N60B3 | IGBT UFS N-CHAN 600V 40A TO-247 |
| HGTG27N120BN | IGBT NPT N-CH 1200V 72A TO-247 |
| HGTG30N60A4D | IGBT N-CH SMPS 600V 60A TO-247 |
| HGTG30N60A4 | IGBT N-CH SMPS 600V 75A TO247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG20N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG20N60A4D_09 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG20N60B3 | 功能描述:IGBT 晶体管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG20N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V40ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,40A,TO-247 |
| HGTG20N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
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