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参数资料
| 型号： | HGTG20N60B3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CHAN 600V 40A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2V @ 15V，20A |
| 电流 - 集电极 (Ic)（最大）： | 40A |
| 功率 - 最大： | 165W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
HGTG20N60B3
Data Sheet
40A, 600V, UFS Series N-Channel IGBTs
The HGTG20N60B3 is a Generation III MOS gated high
voltage switching devices combining the best features of
MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on-
state voltage drop varies only moderately between 25 o C and
150 o C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
October 2004
Features
? 40A, 600V at T C = 25 o C
? 600V Switching SOA Capability
? Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150 o C
? Short Circuit Rated
? Low Conduction Loss
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC STYLE TO-247
Formerly developmental type TA49050.
E
Ordering Information
C
G
PART NUMBER
PACKAGE
BRAND
HGTG20N60B3
TO-247
HG20N60B3
COLLECTOR
NOTE: When ordering, use the entire part number.
(FLANGE)
Symbol
C
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
?2004 Fairchild Semiconductor Corporation
HGTG20N60B3 Rev.B3
相关PDF资料 |
PDF描述 |
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| HGTG27N120BN | IGBT NPT N-CH 1200V 72A TO-247 |
| HGTG30N60A4D | IGBT N-CH SMPS 600V 60A TO-247 |
| HGTG30N60A4 | IGBT N-CH SMPS 600V 75A TO247 |
| HGTG30N60B3D | IGBT N-CH UFS 600V 30A TO-247 |
| HGTG30N60B3 | IGBT UFS N-CHAN 600V 60A TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG20N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V40ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,40A,TO-247 |
| HGTG20N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
| HGTG20N60B3_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG20N60B3_Q | 功能描述:IGBT 晶体管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG20N60B3D | 功能描述:IGBT 晶体管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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