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参数资料
| 型号： | HGTG20N60B3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CHAN 600V 40A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2V @ 15V，20A |
| 电流 - 集电极 (Ic)（最大）： | 40A |
| 功率 - 最大： | 165W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
HGTG20N60B3
Absolute Maximum Ratings
T C = 25 o C, Unless Otherwise Specified
HGTG20N60B3
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV CES
Collector to Gate Voltage, R GE = 1M ? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV CGR
Collector Current Continuous
At T C = 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C25
At T C = 110 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GEM
Switching Safe Operating Area at T C = 150 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T C = 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
Power Dissipation Derating T C > 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T pkg
Short Circuit Withstand Time (Note 2) at V GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t SC
Short Circuit Withstand Time (Note 2) at V GE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t SC
600
600
40
20
160
± 20
± 30
30A at 600V
165
1.32
-40 to 150
300
260
4
10
V
V
A
A
A
V
V
W
W/ o C
o C
o C
o C
μ s
μ s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V CE = 360V, T C = 125 o C, R G = 25 ?.
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified
PARAMETER
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
SYMBOL
BV CES
BV ECS
TEST CONDITIONS
I C = 250 μ A, V GE = 0V
I C = -10mA, V GE = 0V
MIN
600
20
TYP
-
-
MAX
-
-
UNITS
V
V
Collector to Emitter Leakage Current
I CES
V CE = BV CES
T C = 25 o C
-
-
250
μ A
T C = 150 o C
-
-
1.0
mA
Collector to Emitter Saturation Voltage
V CE(SAT)
I C = I C110 , V GE = 15V
T C = 25 o C
-
1.8
2.0
V
T C = 150 o C
-
2.1
2.5
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
V GE(TH)
I GES
I C = 250 μ A, V CE = V GE
V GE = ± 20V
3.0
-
5.0
-
6.0
± 100
V
nA
Switching SOA
SSOA
T C = 150 o C, V GE = 15V,
R G = 10 ?, L = 45 μ H
V CE = 480V
V CE = 600V
100
30
-
-
-
-
A
A
Gate to Emitter Plateau Voltage
V GEP
I C = I C110 , V CE = 0.5 BV CES
-
8.0
-
V
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Thermal Resistance
Q G(ON)
t d(ON)I
t rI
t d(OFF)I
t fI
E ON
E OFF
R θ JC
I C = I C110 ,
V CE = 0.5 BV CES
T C = 150 o C
I CE = I C110
V CE = 0.8 BV CES
V GE = 15V
R G = 10 ?
L = 100 μ H
V GE = 15V
V GE = 20V
-
-
-
-
-
-
-
-
-
80
105
25
20
220
140
475
1050
-
105
135
-
-
275
175
-
-
0.76
nC
nC
ns
ns
ns
ns
μ J
μ J
o C/W
NOTE:
3. Turn-Off Energy Loss (E OFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I CE = 0A). The HGTG20N60B3 was tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
?2004 Fairchild Semiconductor Corporation
HGTG20N60B3 Rev.B3
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| HGTG30N60B3D | IGBT N-CH UFS 600V 30A TO-247 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG20N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V40ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,40A,TO-247 |
| HGTG20N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
| HGTG20N60B3_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG20N60B3_Q | 功能描述:IGBT 晶体管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG20N60B3D | 功能描述:IGBT 晶体管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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