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参数资料
| 型号： | HGTG20N120E2 |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 34A, 1200V N-Channel IGBT |
| 中文描述： | 34 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 2/5页 |
| 文件大小： | 167K |
| 代理商： | HGTG20N120E2 |
3-99
Specifications HGTG20N120E2
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN
TYP
MAX
Collector-Emitter Breakdown
Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
1200
-
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= +25
o
C
-
-
250
μ
A
V
CE
= 0.8 BV
CES
T
C
= +125
o
C
-
-
1.0
mA
Collector-Emitter Saturation
Voltage
V
CE(SAT)
I
C
= I
C90
, V
GE
= 15V
T
C
= +25
o
C
-
2.9
3.5
V
T
C
= +125
o
C
-
3.0
3.6
V
I
C
= I
C90
, V
GE
= 10V
T
C
= +25
o
C
-
3.1
3.8
V
T
C
= +125
o
C
-
3.3
4.0
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 500
μ
A,
V
CE
= V
GE
T
C
= +25
o
C
3.0
4.5
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
250
nA
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C90
, V
CE
= 0.5 BV
CES
-
7.0
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C90
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
110
150
nC
V
GE
= 20V
-
150
200
nC
Current Turn-On Delay Time
t
D(ON)
R
L
= 48
I
C
= I
C90
, V
GE
= 15V,
V
CE
= 0.8 BV
CES
,
R
G
= 25
,
T
J
= +125
o
C
-
100
-
ns
Current Rise Time
t
R
-
150
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
L = 50
μ
H
-
520
620
ns
Current Fall Time
t
FI
-
780
1000
ns
Turn-Off Energy (Note 1)
W
OFF
-
7.0
-
mJ
Current Turn-On Delay Time
t
D(ON)
R
L
= 48
I
C
= I
C90
, V
GE
= 10V,
V
CE
= 0.8 BV
CES
,
R
G
= 25
,
T
J
= +125
o
C
-
100
-
ns
Current Rise Time
t
R
-
150
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
L = 50
μ
H
-
420
520
ns
Current Fall Time
t
FI
-
780
1000
ns
Turn-Off Energy (Note 1)
W
OFF
-
7.0
-
mJ
Thermal Resistance
R
θ
JC
-
0.70
0.83
o
C/W
NOTE:
1. Turn-Off Energy Loss (W
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). The HGTG20N120E2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
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| HGTG20N60A4 | 功能描述:IGBT 晶体管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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