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参数资料
| 型号： | HGTG30N60B3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CHAN 600V 60A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 1.9V @ 15V，30A |
| 电流 - 集电极 (Ic)（最大）： | 60A |
| 功率 - 最大： | 208W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 其它名称： | HGTG30N60B3-ND HGTG30N60B3FS |
HGTG30N60B3
Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified
Ratings
UNIT
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV CES
Collector Current Continuous
At T C = 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C25
At T C = 110 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GEM
Switching Safe Operating Area at T J = 150 o C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T C = 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
Power Dissipation Derating T C > 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E ARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L
Short Circuit Withstand Time (Note 2) at V GE = 12 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t SC
Short Circuit Withstand Time (Note 2) at V GE = 10 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t SC
600
60
30
220
? 20
? 30
60 A at 600 V
208
1.67
100
-55 to 150
260
4
10
V
A
A
A
V
V
W
W/ o C
mJ
o C
o C
? s
? s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V CE(PK) = 360 V, T J = 125 o C, R G = 3 ??
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified
PARAMETER
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
SYMBOL
BV CES
BV ECS
TEST CONDITIONS
I C = 250 ? A, V GE = 0 V
I C = -10 mA, V GE = 0 V
MIN
600
20
TYP
-
-
MAX
-
-
UNIT
V
V
Collector to Emitter Leakage Current
I CES
V CE = BV CES
T C = 25 o C
-
-
250
? A
T C = 150 o C
-
-
3.0
mA
Collector to Emitter Saturation Voltage
V CE(SAT)
I C = I C110 ,
V GE = 15 V
T C = 25 o C
T C = 150 o C
-
-
1.45
1.7
1.9
2.1
V
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
V GE(TH)
I GES
I C = 250 ? A, V CE = V GE
V GE = ? 20 V
4.2
-
5.0
-
6.0
? 250
V
nA
Switching SOA
SSOA
T J = 150 o C,
R G = 3 ??
V GE = 15 V,
L = 100 ? H
V CE (PK) = 480 V
V CE (PK) = 600 V
200
60
-
-
-
-
A
A
Gate to Emitter Plateau Voltage
V GEP
I C = I C110 , V CE = 0.5 BV CES
-
7.2
-
V
On-State Gate Charge
Q G(ON)
I C = I C110 ,
V CE = 0.5 BV CES
V GE = 15 V
V GE = 20 V
-
-
170
230
190
250
nC
nC
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
t d(ON)I
t rI
t d(OFF)I
t fI
E ON1
E ON2
E OFF
IGBT and Diode at T J = 25 o C
I CE = I C110
V CE = 0.8 BV CES
V GE = 15 V
R G = 3 ?
L = 1 mH
Test Circuit (Figure 17)
-
-
-
-
-
-
-
36
25
137
58
500
550
680
-
-
-
-
-
800
900
ns
ns
ns
ns
? J
? J
? J
?2001 Fairchild Semiconductor Corporation
HGTG30N60B3 Rev. C1
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG30N60B3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG30N60B3D | 功能描述:IGBT 晶体管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V30ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,30A,TO-247 |
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:SEMICONDUCTOR |
| HGTG30N60B3D_04 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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