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| 型号： | HGTG30N60B3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CHAN 600V 60A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 1.9V @ 15V，30A |
| 电流 - 集电极 (Ic)（最大）： | 60A |
| 功率 - 最大： | 208W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 其它名称： | HGTG30N60B3-ND HGTG30N60B3FS |
HGTG30N60B3
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
SYMBOL
t d(ON)I
t rI
t d(OFF)I
t fI
E ON1
E ON2
E OFF
R ? JC
TEST CONDITIONS
IGBT and Diode at T J = 150 o C
I CE = I C110
V CE = 0.8 BV CES
V GE = 15 V
R G = 3 ?
L = 1 mH
Test Circuit (Figure 17)
MIN
-
-
-
-
-
-
-
-
TYP
32
24
275
90
500
1300
1600
-
MAX
-
-
320
150
-
1550
1900
0.6
UNIT
ns
ns
ns
ns
? J
? J
? J
o C/W
NOTES:
3. Turn-Off Energy Loss (E OFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I CE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E ON1 is the turn-on loss of the IGBT only. E ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T J as the IGBT. The diode type is specified in
Figure 17.
Typical Performance Curves
Unless Otherwise Specified
60
50
V GE = 15V
225
200
T J = 150 o C, R G = 3 ? , V GE = 15V, L =100 ? H
175
40
30
20
10
150
125
100
75
50
25
0
25
50
75
100
125
150
0
0
100
200
300
400
500
600
700
T C , CASE TEMPERATURE ( o C)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
100
T J = 150 o C, R G = 3 ? , L = 1mH,
V CE = 480V
20
18
V CE = 360V, R G = 3 ? , T J = 125 o C
500
450
10
16
14
12
I SC
400
350
300
1
f MAX1 = 0.05 / (t d(OFF)I + t d(ON)I )
f MAX2 = (P D - P C ) / (E ON2 + E OFF )
P C = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R ?JC = 0.6 o C/W, SEE NOTES
T C
75 o C
75 o C
110 o C
110 o C
V GE
15V
10V
15V
10V
10
8
t SC
250
200
0.1
5
10
20
40
60
6
10
11
12
13
14
15
150
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
V GE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
?2001 Fairchild Semiconductor Corporation
HGTG30N60B3 Rev. C1
3
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG30N60B3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG30N60B3D | 功能描述:IGBT 晶体管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V30ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,30A,TO-247 |
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:SEMICONDUCTOR |
| HGTG30N60B3D_04 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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