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参数资料
| 型号： | HGTG30N60B3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/9页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CHAN 600V 60A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 1.9V @ 15V，30A |
| 电流 - 集电极 (Ic)（最大）： | 60A |
| 功率 - 最大： | 208W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 其它名称： | HGTG30N60B3-ND HGTG30N60B3FS |
HGTG30N60B3
Typical Performance Curves
Unless Otherwise Specified (Continued)
225
DUTY CYCLE <0.5%, V GE = 10V
200 PULSE DURATION = 250 ? s
350
300
DUTY CYCLE <0.5%, V GE = 15V
PULSE DURATION = 250 ? s
175
150
125
100
75
50
T C = -55 o C
T C = 25 o C
T C = 150 o C
250
200
150
100
T C = -55 o C
T C = 25 o C
T C = 150 o C
25
50
0
0
2
4
6
8
10
0
0
1
2
3
4
5
6
7
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
6
R G = 3 ? , L = 1mH, V CE = 480V
4.5
R G = 3 ? , L = 1mH, V CE = 480V
4.0
5
4
T J = 25 o C, T J = 150 o C, V GE = 10V
3.5
3.0
3
2
2.5
2.0
1.5
1.0
T J = 150 o C, V GE = 10V OR 15V
1
0
10
20
30
T J = 25 o C, T J = 150 o C, V GE = 15V
40 50 60
0.5
0
10
20
30
T J = 25 o C, V GE = 10V OR 15V
40 50
60
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
55
50
45
40
R G = 3 ? , L = 1mH, V CE = 480V
T J = 25 o C, T J = 150 o C, V GE = 10V
250
200
150
R G = 3 ? , L = 1mH, V CE = 480V
T J = 25 o C, T J = 150 o C, V GE = 10V
T J = 25 o C, T J = 150 o C, V GE = 15V
100
35
30
T J = 25 o C, T J = 150 o C, V GE = 15V
50
25
10
20
30
40
50
60
0
10
20
30
40
50
60
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
?2001 Fairchild Semiconductor Corporation
HGTG30N60B3 Rev. C1
4
www.fairchildsemi.com
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| HGTG30N60C3D | IGBT N-CH UFS 600V 30A TO-247 |
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| HGTG40N60B3 | IGBT N-CH UFS 600V 70A TO-247 |
| HGTP12N60C3D | IGBT SMPS N-CH 600V 24A TO-220AB |
| HGTP20N60A4 | IGBT N-CH SMPS 600V 70A TO220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG30N60B3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG30N60B3D | 功能描述:IGBT 晶体管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V30ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,30A,TO-247 |
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:SEMICONDUCTOR |
| HGTG30N60B3D_04 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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