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参数资料
| 型号： | HGTG30N60C3D |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 63 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 2/8页 |
| 文件大小： | 144K |
| 代理商： | HGTG30N60C3D |
2001 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG30N60C3D
600
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
At T
C
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
At T
C
= 110
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Average Diode Forward Current at 110
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
J
= 150
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating T
C
> 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
CES
o
C25
63
30
25
252
±
20
±
30
A
A
A
A
V
V
o
C110
o
(AVG)
CM
GES
GEM
o
60A at 600V
208
1.67
-40 to 150
260
4
15
o
D
W
o
W/
o
o
C
J
, T
STG
C
C
s
s
L
o
SC
μ
μ
SC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
C, R
G
= 25
o
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
25
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
μ
A
V
CE
= BV
CES
T
C
= 150
o
C
-
-
3.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
V
C
= I
GE
C110
= 15V
,
T
C
= 25
o
C
-
1.5
1.8
V
T
C
= 150
o
C
-
1.7
2.0
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
V
C
= 250
CE
= V
μ
GE
A,
T
C
= 25
o
C
3.0
5.2
6.0
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
100
nA
Switching SOA
SSOA
T
V
R
L = 100
J
GE
G
= 150
= 15V,
= 3
,
o
C,
μ
H
V
CE(PK)
= 480V
200
-
-
A
V
CE(PK)
= 600V
60
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
8.1
-
V
On-State Gate Charge
Q
G(ON)
I
V
C
= I
CE
C110
= 0.5 BV
,
CES
V
GE
= 15V
-
162
180
nC
V
GE
= 20V
-
216
250
nC
Current Turn-On Delay Time
t
d(ON)I
T
I
CE
V
CE(PK)
V
GE
R
G
= 3
L = 100
J
= 150
= I
o
C,
C110,
= 0.8 BV
= 15V,
,
μ
H
CES,
-
40
-
ns
Current Rise Time
t
rI
-
45
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
320
400
ns
Current Fall Time
t
fI
-
230
275
ns
Turn-On Energy
E
ON
-
1050
-
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
2500
-
μ
J
Diode Forward Voltage
V
EC
I
EC
= 30A
-
1.75
2.2
V
HGTG30N60C3D
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